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Teilenummer | C2M0040120D |
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Beschreibung | Silicon Carbide Power MOSFET | |
Hersteller | Cree | |
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Gesamt 10 Seiten VDS 1200 V
C2M0040120D
Silicon Carbide Power MOSFET
TM
C2M MOSFET Technology
ID @ 25˚C
60 A
RDS(on) 40 mΩ
N-Channel Enhancement Mode
Features
Package
• High Blocking Voltage with Low On-Resistance
• High Speed Switching with Low Capacitances
• Easy to Parallel and Simple to Drive
• Avalanche Ruggedness
• Resistant to Latch-Up
• Halogen Free, RoHS Compliant
Benefits
TO-247-3
• Higher System Efficiency
• Reduced Cooling Requirements
• Increased Power Density
• Increased System Switching Frequency
Applications
• Solar Inverters
• Switch Mode Power Supplies
• High Voltage DC/DC converters
• Battery Chargers
• Motor Drives
• Pulsed Power Applications
Part Number
C2M0040120D
Package
TO-247-3
Maximum Ratings (TC = 25 ˚C unless otherwise specified)
Symbol
Parameter
Value
Unit
Test Conditions
VDSmax
VGSmax
VGSop
Drain - Source Voltage
Gate - Source Voltage
Gate - Source Voltage
ID Continuous Drain Current
ID(pulse) Pulsed Drain Current
PD Power Dissipation
TJ , Tstg Operating Junction and Storage Temperature
TL Solder Temperature
Md Mounting Torque
1200
-10/+25
-5/+20
60
40
V VGS = 0 V, ID = 100 μA
V Absolute maximum values
V Recommended operational values
VGS = 20 V, TC = 25˚C
A
VGS = 20 V, TC = 100˚C
160 A Pulse width tP limited by Tjmax
330
-55 to
+150
260
1
8.8
W TC=25˚C, TJ = 150 ˚C
˚C
˚C 1.6mm (0.063”) from case for 10s
Nm
lbf-in
M3 or 6-32 screw
Note
Fig. 19
Fig. 22
Fig. 20
1 C2M0040120D Rev. B, 10-2015
Typical Performance
70
Conditions:
60 TJ ≤ 150 °C
50
40
30
20
10
0
-55
-5 45 95
Case Temperature, TC (°C)
145
Figure 19. Continuous Drain Current Derating vs.
Case Temperature
1
100E-3
10E-3
0.5
0.3
0.1
0.05
0.02
0.01
1E-3
SinglePulse
100E-6
1E-6
10E-6
100E-6
1E-3
Time, tp (s)
10E-3
100E-3
Figure 21. Transient Thermal Impedance
(Junction - Case)
6
Conditions:
TJ = 25 °C
5 VDD = 800 V
RG(ext) = 2.5 Ω
VGS = -5/+20 V
4
FWD = C4D20120A
L = 80 μH
ETotal
3 EOn
1
2 EOff
1
0
0 10 20 30 40 50 60 70 80
Drain to Source Current, IDS (A)
Figure 23. Clamped Inductive Switching Energy vs.
Drain Current (VDD = 800V)
90
350
Conditions:
TJ ≤ 150 °C
300
250
200
150
100
50
0
-55
-5 45 95
Case Temperature, TC (°C)
145
Figure 20. Maximum Power Dissipation Derating vs.
Case Temperature
100.00
10.00
Limited by RDS On
1.00
10 µs
100 µs
1 ms
100 ms
0.10
Conditions:
TC = 25 °C
D = 0,
Parameter: tp
0.01
0.1
1
10 100
Drain-Source Voltage, VDS (V)
1000
Figure 22. Safe Operating Area
4
Conditions:
3.5
TJ = 25 °C
VDD = 600 V
3
RG(ext) = 2.5 Ω
VGS = -5/+20 V
FWD = C4D20120A
2.5 L = 80 μH
2
ETotal
EOn
1.5 EOff
1
0.5
0
0 10 20 30 40 50 60 70 80
Drain to Source Current, IDS (A)
Figure 24. Clamped Inductive Switching Energy vs.
Drain Current (VDD = 600V)
90
6 C2M0040120D Rev. B, 10-2015
6 Page | ||
Seiten | Gesamt 10 Seiten | |
PDF Download | [ C2M0040120D Schematic.PDF ] |
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