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ACE4010M Schematic ( PDF Datasheet ) - ACE Technology

Teilenummer ACE4010M
Beschreibung N-Channel MOSFET
Hersteller ACE Technology
Logo ACE Technology Logo 




Gesamt 7 Seiten
ACE4010M Datasheet, Funktion
ACE4010M
N-Channel 100-V MOSFET
Description
ACE4010M uses advanced trench technology to provide excellent RDS(ON).
This device particularly suits for low voltage application such as power management of desktop
computer or notebook computer power management, DC/DC converter.
Features
Low rDS(on) trench technology
Low thermal impedance
Fast switching speed
Applications:
PoE Power Sourcing Equipment
PoE Powered Devices
Telecom DC/DC converters
White LED boost converters
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current b
TC=25°C
Continuous Source Current (Diode Conduction)
Power Dissipation
TC=25°C
Operating Junction and Storage Temperature Range
Symbol
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
Limit
100
±20
26
50
50
50
-55 to 175
Unit
V
A
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient a
Maximum Junction-to-Case
Symbol Maximum Unit
RθJA
RθJC
40
°C/W
3
Notes
a. Surface Mounted on 1” x 1” FR4 Board, drain pad using 2 oz copper, value dependent on PC board thermal characteristics.
b. Pulse width limited by maximum junction temperature.
VER 1.1 1






ACE4010M Datasheet, Funktion
Packing Information
TO-252
ACE4010M
N-Channel 100-V MOSFET
SYMBOL
E
L
L1
L2
L3
L4
L5
D
H
b
b2
b3
e
A
A1
c
c2
D1
E1
θ
DIMENSIONAL REQMTS
MIN NOM MAX
6.40 6.60 6.731
1.40 1.52 1.77
2.743 REF
0.508 BSC
0.89 1.27
06.4 1.01
6.00
9.40
0.64
0.77
5.21
2.20
0
0.45
0.45
5.30
4.40
0
6.10 6.223
10.00 10.40
0.76 0.88
0.84 1.14
5.34 5.46
2.286 BSC
2.30 2.38
0.127
0.50 0.60
0.50 0.58
10
VER 1.1 6

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