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PDF ACE3926E Data sheet ( Hoja de datos )
| Número de pieza | ACE3926E | |
| Descripción | DUAL N-Channel MOSFET | |
| Fabricantes | ACE Technology | |
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ACE3926E
Dual N-Channel 20-V MOSFET
Description
The ACE3926E utilize a high cell density trench process to provide low rDS(on) and to ensure minimal
power loss and heat dissipation. Typical applications are DC-DC converters and power management in
portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless
telephones.
Features
• Low rDS(on) trench technology
• Low thermal impedance
• Fast switching speed
Applications
• Power Routing
• Li Ion Battery Packs
• Level Shifting and Driver Circuits
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current a
Pulsed Drain Current b
TA=25℃
TA=70℃
Continuous Source Current (Diode Conduction) a
Power Dissipation a
TA=25℃
TA=70℃
Operating temperature / storage temperature
Symbol Limit Units
VDS 20 V
VGS ±12 V
13
ID
A
10
IDM 50 A
IS 7 A
2.5
PD
W
1.5
TJ/TSTG -55~150 ℃
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Maximum Junction-to-Ambient a
t <= 10 sec
Steady State
RθJA
Maximum
83
120
Units
°C/W
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
VER 1.1 1
1 page  
Typical Performance Characteristics
ACE3926E
Dual N-Channel 20-V MOSFET
Qg - Total Gate Charge (nC)
7. Gate Charge
VDS (V)
8. Normalized On-Resistance Vs
Junction Temperature
VDS Drain to Source Voltage (V)
9. Safe Operating Area
t1 TIME (sec)
10.Single Pulse Maximum Power Dissipation
t1 TIME (sec)
11. Normalized Thermal Transient Junction to Ambient
VER 1.1 5
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet ACE3926E.PDF ] | |
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