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ACE2390M Schematic ( PDF Datasheet ) - ACE Technology

Teilenummer ACE2390M
Beschreibung N-Channel MOSFET
Hersteller ACE Technology
Logo ACE Technology Logo 




Gesamt 7 Seiten
ACE2390M Datasheet, Funktion
ACE2390M
N-Channel 150-V MOSFET
Description
ACE2390M uses advanced trench technology to provide excellent RDS(ON).
This device particularly suits for low voltage application such as power management of desktop
computer or notebook computer power management, DC/DC converter.
Features
Low rDS(on) trench technology
Low thermal impedance
Fast switching speed
Applications:
PoE Power Sourcing Equipment
PoE Powered Devices
Telecom DC/DC converters
White LED boost converters
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Currenta
Pulsed Drain Current b
TA=25°C
TA=70°C
Continuous Source Current (Diode Conduction) a
Power Dissipationa
TA=25°C
TA=70°C
Operating Junction and Storage Temperature Range
Symbol
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
Limit
150
±20
1.1
0.9
5
1.6
1.3
0.8
-55 to 150
Unit
V
A
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient a
t<=10sec
Steady State
Symbol Maximum Unit
RθJA
100
°C/W
166
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
VER 1.1 1






ACE2390M Datasheet, Funktion
Packing Information
STO-23-3
ACE2390M
N-Channel 150-V MOSFET
SYMBOLS
A
A1
A2
b
C
D
E
E1
e
e1
L
L1
L2
R
Θ
Θ1
MILLIMETERS
MIN NOM MAX
0.935
0.95
1.10
0.01 0.10
0.85 0.90 0.925
0.30 0.40 0.50
0.10 0.15 0.25
2.70 2.90 3.10
2.60 2.80 3.00
1.40 1.60 1.80
0.95 BSC
1.90 BSC
0.30 0.40 0.60
0.60REF
0.25BSC
0.10
0° 4° 8°
7°NOM
VER 1.1 6

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