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PDF ACE2320M Data sheet ( Hoja de datos )
| Número de pieza | ACE2320M | |
| Descripción | N-Channel MOSFET | |
| Fabricantes | ACE Technology | |
| Logotipo |  |
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ACE2320M
N-Channel 20-V MOSFET
Description
ACE2320M uses advanced trench technology to provide excellent RDS(ON).
This device particularly suits for low voltage application such as power management of desktop
computer or notebook computer power management, DC/DC converter.
Features
• Low rDS(on) provides higher efficiency and extends battery life
• Low thermal impedance copper leadframe SOT-23 saves board space
• Fast switching speed
• High performance trench technology
Applications
• White LED boost converters
• Automotive Systems
• Industrial DC/DC Conversion Circuits
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current a
Pulsed Drain Current b
TA=25℃
TA=70℃
Continuous Source Current (Diode Conduction) a
Power Dissipation a
TA=25℃
TA=70℃
Operating temperature / storage temperature
Symbol Limit Units
VDS 20 V
VGS ±8 V
7.0
ID
A
5.5
IDM 20 A
IS 1.9 A
1.3
PD
W
0.8
TJ/TSTG -55~150 ℃
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Maximum Junction-to-Ambient a
t <= 10 sec
Steady State
RθJA
Maximum
100
166
Units
°C/W
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
VER 1.1 1
1 page  
Typical Performance Characteristics
ACE2320M
N-Channel 20-V MOSFET
Qg - Total Gate Charge (nC)
7. Gate Charge
TJ –Junction Temperature(°C)
8. Normalized On-Resistance Vs
Junction Temperature
VDS Drain to Source Voltage (V)
9. Safe Operating Area
t1 TIME (SEC)
10. Single Pulse Maximum Power Dissipation
t1 TIME (sec)
11. Normalized Thermal Transient Junction to Ambient
VER 1.1 5
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet ACE2320M.PDF ] | |
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