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PDF CGHV59350 Data sheet ( Hoja de datos )
| Número de pieza | CGHV59350 | |
| Descripción | GaN HEMT | |
| Fabricantes | Cree | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de CGHV59350 (archivo pdf) en la parte inferior de esta página. Total 12 Páginas | ||
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PRELIMINARY
CGHV59350
350 W, 5200 - 5900 MHz, 50-Ohm Input/Output Matched, GaN HEMT for C-Band Radar Systems
Cree’s CGHV59350 is a gallium nitride (GaN) high electron mobility transistor (HEMT)
designed specifically with high efficiency, high gain and wide bandwidth capabilities,
which makes the CGHV59350 ideal for 5.2 - 5.9 GHz C-Band radar amplifier applications.
The transistor is supplied in a ceramic/metal flange package, type 440217 and 440218.
Package
Type:
PN:
440217
CGHV59350
and 440218
Typical Performance Over 5.2 - 5.9 GHz (TC = 25˚C) of Demonstration Amplifier
Parameter
5.2 GHz
5.55 GHz
5.9 GHz
Output Power
440 445 490
Gain
10.5
10.5
11
Drain Efficiency
59 54
Note:
Measured in the CGHV59350-TB under 100 μs pulse width, 10% duty cycle, PIN = 46 dBm
55
Units
W
dB
%
Features
• 5.2 - 5.9 GHz Operation
• 450 W Typical Output Power
• 10.5 dB Power Gain
• 55% Typical Drain Efficiency
• 50 Ohm Internally Matched
• <0.3 dB Pulsed Amplitude Droop
Subject to change without notice.
www.cree.com/rf
1
1 page  
Typical Performance
CGHV59350 Output Power vs. Input Power
VDDF=ig5u0rVe, I3D.Q-=C1GAH, PVu5ls9e3W5i0dtOh u=t1p0u0tµPSo, Dwuetyr Cvysc.leIn=p1u0t%P, oTwcaesre = 25 °C
VDD = 50V, IDQ= 1.0 A, Pulse Width = 100μS, Duty Cycle = 10%, Tcase = 25 °C
58
56
54
Pout 5.2 GHz
52
Pout 5.375 GHz
50 Pout 5.55 GHz
48 Pout 5.725 GHz
46 Pout 5.9 GHz
44
42
40
28 30 32 34 36 38 40 42 44 46
Input Power (dBm)
48
CGHV59350 Output Power vs. Input Power
VDDF=ig5u0rVe, 4ID.Q- =C1GAH, VPu5l9se3W50idtOhu=t1p0u0tµPSo, wDuetyr Cvsyc.leIn=p1u0t %P,oTwcaesre = 25 °C
VDD = 50V, IDQ= 1.0 A, Pulse Width = 100μS, Duty Cycle = 10%, Tcase = 25 °C
70
16
60 14
50 12
40 10
30 8
20
DEff 5.2 GHz
DEff 5.375 GHz
DEff 5.55 GHz
6
DEff 5.725 GHz
DEff 5.9 GHz
Gain 5.2 GHz
10
Gain 5.375 GHz
Gain 5.55 GHz
Gain 5.725 GHz 4
Gain 5.9 GHz
02
28 30 32 34 36 38 40 42 44 46 48
Input Power (dBm)
Copyright © 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
5 CGHV59350 Rev 0.0 - PRELIMINARY
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
5 Page 
Product Ordering Information
Order Number
Description
CGHV59350F
GaN HEMT
Unit of Measure
Each
Image
CGHV59350P
GaN HEMT
Each
CGHV59350-TB
Test board without GaN HEMT
Each
CGHV59350-AMP1
Test board with GaN HEMT installed
Each
Copyright © 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
11 CGHV59350 Rev 0.0 - PRELIMINARY
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet CGHV59350.PDF ] | |
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