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PDF R1RP0416DI Data sheet ( Hoja de datos )
| Número de pieza | R1RP0416DI | |
| Descripción | 4M High Speed SRAM | |
| Fabricantes | Renesas | |
| Logotipo |  |
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R1RP0416DI Series
Wide Temperature Range Version
4M High Speed SRAM (256-kword × 16-bit)
REJ03C0110-0100Z
Rev. 1.00
Mar.12.2004
Description
The R1RP0416DI Series is a 4-Mbit high speed static RAM organized 256-k word × 16-bit. It has realized
high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit
designing technology. It is most appropriate for the application which requires high speed, high density
memory and wide bit width configuration, such as cache and buffer memory in system. It is packaged in
400-mil 44-pin plastic SOJ and 400-mil 44-pin plastic TSOPII.
Features
• Single 5.0 V supply: 5.0 V ± 10%
• Access time: 12 ns (max)
• Completely static memory
No clock or timing strobe required
• Equal access and cycle times
• Directly TTL compatible
All inputs and outputs
• Operating current: 160 mA (max)
• TTL standby current: 40 mA (max)
• CMOS standby current: 5 mA (max)
• Center VCC and VSS type pin out
• Temperature range: −40 to +85°C
Ordering Information
Type No.
R1RP0416DGE-2PI
R1RP0416DSB-2PI
Access time
12 ns
12 ns
Package
400-mil 44-pin plastic SOJ (44P0K)
400-mil 44-pin plastic TSOPII (44P3W-H)
Rev.1.00, Mar.12.2004, page 1 of 12
1 page  
R1RP0416DI Series
Recommended DC Operating Conditions
(Ta = −40 to +85°C)
Parameter
Symbol
Min Typ
Supply voltage
VCC*3
4.5 5.0
VSS*4
00
Input voltage
VIH 2.2
V
IL
−0.5*1
Notes:
1.
V
IL
(min)
=
−2.0
V
for
pulse
width
(under
shoot)
≤
6
ns.
2. VIH (max) = VCC + 2.0 V for pulse width (over shoot) ≤ 6 ns.
3. The supply voltage with all VCC pins must be on the same level.
4. The supply voltage with all V pins must be on the same level.
SS
Max Unit
5.5 V
0V
VCC + 0.5*2 V
0.8 V
DC Characteristics
(Ta = −40 to +85°C, VCC = 5.0 V ± 10%, VSS = 0 V)
Parameter
Input leakage current
Output leakage current*1
Operating power supply current
Symbol
|I |
LI
|I |
LO
ICC
Min
Standby power supply current
I
SB
ISB1
Output voltage
V
OL
VOH 2.4
Max
2
2
160
40
5
0.4
Unit
µA
µA
mA
mA
mA
V
V
Test conditions
V = V to V
IN SS
CC
V = V to V
IN SS
CC
CS# = VIL, IOUT = 0 mA
Other inputs = VIH/VIL
CS# = V ,
IH
Other inputs = VIH/VIL
VCC ≥ CS# ≥ VCC − 0.2 V,
(1)
0
V
≤
V
IN
≤
0.2
V
or
(2) VCC ≥ VIN ≥ VCC − 0.2 V
I = 8 mA
OL
IOH = −4 mA
Capacitance
(Ta = +25°C, f = 1.0 MHz)
Parameter
Symbol Min
Input capacitance*1
CIN
Input/output capacitance*1
C
I/O
Note: 1. This parameter is sampled and not 100% tested.
Max
6
8
Unit
pF
pF
Test conditions
VIN = 0 V
V =0V
I/O
Rev.1.00, Mar.12.2004, page 5 of 12
5 Page 
R1RP0416DI Series
Write Timing Waveform (2) (CS# Controlled)
Address
WE# *3
CS# *3
tWC
Valid address
tAW
tAS
tWP
tCW
tWR
OE#
LB#, UB#
DOUT
DIN
tBW
tWHZ
tOHZ
*2
tOLZ
tOW
High impedance *4
tDW tDH
Valid data
Rev.1.00, Mar.12.2004, page 11 of 12
11 Page | ||
| Páginas | Total 14 Páginas | |
| PDF Descargar | [ Datasheet R1RP0416DI.PDF ] | |
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