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PDTD113ZU Schematic ( PDF Datasheet ) - NXP Semiconductors

Teilenummer PDTD113ZU
Beschreibung NPN resistor-equipped transistors
Hersteller NXP Semiconductors
Logo NXP Semiconductors Logo 




Gesamt 27 Seiten
PDTD113ZU Datasheet, Funktion
PDTD1xxxU series
500 mA, 50 V NPN resistor-equipped transistors
Rev. 1 — 13 May 2014
Product data sheet
1. Product profile
1.1 General description
NPN Resistor-Equipped Transistor (RET) family in a very small SOT323 (SC-70)
Surface-Mounted Device (SMD) plastic package.
Table 1. Product overview
Type number
Package
NXP
PDTD113EU
SOT323
PDTD113ZU
PDTD123EU
PDTD123YU
PDTD143EU
PDTD143XU
PDTD114EU
JEITA
SC-70
JEDEC
-
PNP
complement
PDTB113EU
PDTB113ZU
PDTB123EU
PDTB123YU
PDTB143EU
PDTB143XU
PDTB114EU
Package
configuration
very small
1.2 Features
500 mA output current capability
Built-in bias resistors
Simplifies circuit design
Reduces component count
10 % resistor ratio tolerance
AEC-Q101 qualified
High temperature applications
up to 175 °C
1.3 Applications
IC inputs control
Cost-saving alternative to BC807 or
BC817 series transistors in digital
applications
Switching loads






PDTD113ZU Datasheet, Funktion
NXP Semiconductors
PDTD1xxxU series
500 mA, 50 V NPN resistor-equipped transistors
7. Characteristics
PDTD1XXXU_SER
Product data sheet
Table 8. Characteristics
Tamb = 25 C unless otherwise specified.
Symbol Parameter
Conditions
ICBO
ICEO
collector-base cut-off
current
collector-emitter cut-off
current
VCB = 40 V; IE = 0 A
VCB = 50 V; IE = 0 A
VCE = 50 V; IB = 0 A
IEBO emitter-base cut-off VEB = 5 V; IC = 0 A
current
PDTD113EU
PDTD113ZU
PDTD123EU
PDTD123YU
PDTD143EU
PDTD143XU
PDTD114EU
hFE DC current gain
PDTD113EU
VCE = 5 V; IC = 50 mA
PDTD113ZU
PDTD123EU
PDTD123YU
PDTD143EU
PDTD143XU
PDTD114EU
VCEsat collector-emitter
saturation voltage
IC = 50 mA; IB = 2.5 mA
VI(off)
off-state input voltage VCE = 5 V; IC = 100 A
PDTD113EU
PDTD113ZU
PDTD123EU
PDTD123YU
PDTD143EU
PDTD143XU
PDTD114EU
VI(on)
on-state input voltage VCE = 0.3 V; IC = 20 mA
PDTD113EU
PDTD113ZU
PDTD123EU
PDTD123YU
PDTD143EU
PDTD143XU
PDTD114EU
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 13 May 2014
Min Typ Max Unit
- - 100 nA
- - 100 nA
- - 0.5 A
--
--
--
--
--
--
--
33 -
70 -
40 -
70 -
60 -
70 -
70 -
--
4.0 mA
0.8 mA
2.0 mA
0.65 mA
0.9 mA
0.6 mA
0.4 mA
-
-
-
-
-
-
-
100 mV
0.6 1.1 1.5 V
0.3 0.6 1.0 V
0.6 1.1 1.8 V
0.4 0.6 1.0 V
0.6 0.9 1.5 V
0.5 0.75 1.1 V
0.6 1.0 1.5 V
1.0 1.4 1.8 V
0.4 0.8 1.4 V
1.0 1.5 2.0 V
0.5 1.0 1.4 V
1.0 1.6 2.2 V
1.0 1.25 2.0 V
1.0 1.9 3.0 V
© NXP Semiconductors N.V. 2014. All rights reserved.
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6 Page









PDTD113ZU pdf, datenblatt
NXP Semiconductors
PDTD1xxxU series
500 mA, 50 V NPN resistor-equipped transistors
103
hFE
102
10
006aaa318
(1)
(2)
(3)
10-1
VCEsat
(V)
aaa-012447
(1)
(2)
(3)
1
101
101
1
10 102 103
IC (mA)
VCE = 5 V
(1) Tamb = 100 C
(2) Tamb = 25 C
(3) Tamb = 40 C
Fig 18. PDTD123EU: DC current gain as a function of
collector current; typical values
10-2
1
10 102 103
IC (mA)
IC/IB = 20
(1) Tamb = 100 C
(2) Tamb = 25 C
(3) Tamb = 40 C
Fig 19. PDTD123EU: Collector-emitter saturation
voltage as a function of collector current;
typical values
10
006aaa320
10
006aaa321
VI(on)
(V)
1
(1)
(2)
(3)
VI(off)
(V)
1
(1)
(2)
(3)
101
101
1
10 102 103
IC (mA)
VCE = 0.3 V
(1) Tamb = 40 C
(2) Tamb = 25 C
(3) Tamb = 100 C
Fig 20. PDTD123EU: On-state input voltage as a
function of collector current; typical values
101
101
1 10
IC (mA)
VCE = 5 V
(1) Tamb = 40 C
(2) Tamb = 25 C
(3) Tamb = 100 C
Fig 21. PDTD123EU: Off-state input voltage as a
function of collector current; typical values
PDTD1XXXU_SER
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 13 May 2014
© NXP Semiconductors N.V. 2014. All rights reserved.
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