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PDF PDTD113EU Data sheet ( Hoja de datos )
| Número de pieza | PDTD113EU | |
| Descripción | NPN resistor-equipped transistors | |
| Fabricantes | NXP Semiconductors | |
| Logotipo |  |
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PDTD1xxxU series
500 mA, 50 V NPN resistor-equipped transistors
Rev. 1 — 13 May 2014
Product data sheet
1. Product profile
1.1 General description
NPN Resistor-Equipped Transistor (RET) family in a very small SOT323 (SC-70)
Surface-Mounted Device (SMD) plastic package.
Table 1. Product overview
Type number
Package
NXP
PDTD113EU
SOT323
PDTD113ZU
PDTD123EU
PDTD123YU
PDTD143EU
PDTD143XU
PDTD114EU
JEITA
SC-70
JEDEC
-
PNP
complement
PDTB113EU
PDTB113ZU
PDTB123EU
PDTB123YU
PDTB143EU
PDTB143XU
PDTB114EU
Package
configuration
very small
1.2 Features
500 mA output current capability
Built-in bias resistors
Simplifies circuit design
Reduces component count
10 % resistor ratio tolerance
AEC-Q101 qualified
High temperature applications
up to 175 °C
1.3 Applications
IC inputs control
Cost-saving alternative to BC807 or
BC817 series transistors in digital
applications
Switching loads
1 page  
NXP Semiconductors
PDTD1xxxU series
500 mA, 50 V NPN resistor-equipped transistors
103
Zth(j-a)
(K/W)
102
duty cycle = 1
0.75
0.5
0.33
0.2
0.1
0.05
10 0.02
0.01
10
aaa-012062
10-1
10-5
10-4
10-3
10-2
10-1
1
10 102 103
tp (s)
Fig 2.
FR4 PCB, single-sided copper, tin-plated and standard footprint
Transient thermal impedance from junction to ambient as a function of pulse duration for SOT323/SC-70;
typical values
103
Zth(j-a)
(K/W)
102
duty cycle = 1
0.75
0.5
0.33
0.2
0.1
10
0.02
0.05
0.01
aaa-012063
0
1
10-5
10-4
10-3
10-2
10-1
1
10 102 103
tp (s)
Fig 3.
FR4 PCB, 4-layer copper, tin-plated and standard footprint.
Transient thermal impedance from junction to ambient as a function of pulse duration for SOT323/SC-70;
typical values
PDTD1XXXU_SER
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 13 May 2014
© NXP Semiconductors N.V. 2014. All rights reserved.
5 of 27
5 Page 
NXP Semiconductors
PDTD1xxxU series
500 mA, 50 V NPN resistor-equipped transistors
0.5
IC
(A)
0.4
0.3
0.2
aaa-012432
1.7
1.53
1.36
1.19
1.02
0.85
0.68
25
Cc
(pF)
20
15
10
aaa-012437
0.51
0.1 5
0.34
0 IB = 0.17 mA
012345
VCE (V)
0
0 10 20 30 40 50
VCB (V)
Tamb = 25 C
Fig 15. PDTD113ZU: Collector current as a function of
collector-emitter voltage; typical values
f = 1 MHz; Tamb = 25 C
Fig 16. PDTD113ZU: Collector capacitance as a
function of collector-base voltage; typical
values
103
fT
(MHz)
102
aaa-012066
10
1
10-1
1
10 102 103
IC (mA)
VCE = 5 V; Tamb = 25 C
Fig 17. PDTD113ZU: Transition frequency as a function of collector current; typical values of built-in transistor
PDTD1XXXU_SER
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 13 May 2014
© NXP Semiconductors N.V. 2014. All rights reserved.
11 of 27
11 Page | ||
| Páginas | Total 27 Páginas | |
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