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PDF PDTD113ZT Data sheet ( Hoja de datos )
| Número de pieza | PDTD113ZT | |
| Descripción | NPN resistor-equipped transistor | |
| Fabricantes | NXP Semiconductors | |
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PDTD113ZT
NPN 500 mA, 50 V resistor-equipped transistor;
R1 = 1 kΩ, R2 = 10 kΩ
Rev. 02 — 23 March 2009
Product data sheet
1. Product profile
1.1 General description
NPN 500 mA Resistor-Equipped Transistor (RET) in a small Surface-Mounted
Device (SMD) plastic package.
PNP complement: PDTB113ZT.
1.2 Features
I Built-in bias resistors
I Simplifies circuit design
I 500 mA output current capability
I Reduces component count
I Reduces pick and place costs
I ±10 % resistor ratio tolerance
1.3 Applications
I Digital application in automotive and
industrial segments
I Controlling IC inputs
I Cost-saving alternative for BC817 series
in digital applications
I Switching loads
1.4 Quick reference data
Table 1.
Symbol
VCEO
IO
R1
R2/R1
Quick reference data
Parameter
collector-emitter voltage
output current
bias resistor 1 (input)
bias resistor ratio
Conditions
open base
Min Typ Max Unit
- - 50 V
- - 500 mA
0.7 1
1.3 kΩ
9 10 11
1 page  
NXP Semiconductors
8. Package outline
PDTD113ZT
NPN 500 mA resistor-equipped transistor; R1 = 1 kΩ, R2 = 10 kΩ
2.5 1.4
2.1 1.2
3.0
2.8
3
1.1
0.9
0.45
0.15
1
Dimensions in mm
1.9
Fig 5. Package outline SOT23 (TO-236AB)
2
0.48
0.38
0.15
0.09
04-11-04
9. Packing information
Table 8. Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.[1]
Type number Package Description
PDTD113ZT SOT23
4 mm pitch, 8 mm tape and reel
Packing quantity
3 000
10 000
-215
-235
[1] For further information and the availability of packing methods, see Section 13.
PDTD113ZT_2
Product data sheet
Rev. 02 — 23 March 2009
© NXP B.V. 2009. All rights reserved.
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