|
|
PDF DMB54D0UV Data sheet ( Hoja de datos )
| Número de pieza | DMB54D0UV | |
| Descripción | N-CHANNEL ENHANCEMENT MODE MOSFET PLUS PNP TRANSISTOR | |
| Fabricantes | Diodes | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de DMB54D0UV (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
|
No Preview Available !
DMB54D0UV
N-CHANNEL ENHANCEMENT MODE MOSFET PLUS PNP TRANSISTOR
Features
• N-Channel MOSFET and PNP Transistor in One Package
• Low On-Resistance
• Very Low Gate Threshold Voltage, 1.0V max
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• Ultra-Small Surface Mount Package
• ESD Protected MOSFET Gate up to 2kV
• Lead, Halogen and Antimony Free, RoHS Compliant (Note 1)
• "Green" Device (Note 2)
• Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case: SOT563
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminal Connections: See Diagram
• Terminals: Finish - Matte Tin annealed over Copper lead frame.
Solderable per MIL-STD-202, Method 208
• Weight: 0.006 grams (approximate)
SOT563
D2
Q1
B
E
Q2
ESD PROTECTED TO 2kV
Top View
Bottom View
S2 G2 C
Top View
Internal Schematic
Ordering Information (Note 3)
Notes:
Part Number
DMB54D0UV-7
DMB54D0UV-13
Case
SOT563
SOT563
Packaging
3,000/Tape & Reel
10,000/Tape & Reel
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. No purposely added lead. Halogen and Antimony free
2. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com.
3. For packaging details, go to our website at http://www.diodes.com.
Marking Information
MB2 YM
MB2 = Marking Code
YM = Date Code Marking
Y = Year (ex: V = 2008)
M = Month (ex: 9 = September)
Date Code Key
Year
Code
Month
Code
2008
V
Jan
1
2009
W
Feb
2
2010
X
2011
Y
Mar Apr May
345
2012
Z
Jun
6
2013
A
Jul
7
2014
B
Aug
8
2015
C
Sep Oct
9O
2016
D
Nov
N
2017
E
Dec
D
DMB54D0UV
Document number: DS31676 Rev. 5 - 2
1 of 7
www.diodes.com
March 2012
© Diodes Incorporated
1 page  
DMB54D0UV
300
250
200
150
100
50 RθJA = 500°C/W
0
-50 0
50 100 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 9 Derating Curve - Total Package Power Dissipation
1,000
TA = 150°C
PNP Transistor
VCE = 5V
0.5
0.4
IC
IB = 10
100
TA = 25°C
TA = -50°C
10
1
1 10 100 1,000
IC, COLLECTOR CURRENT (mA)
Fig. 10 Typical DC Current Gain vs. Collector Current
1,000
VCE = 5V
0.3
0.2 TA = 25°C
TA = 150°C
0.1
TA = -50°C
0
0.1 1
10 100 1,000
IC, COLLECTOR CURRENT (mA)
Fig. 11 Collector-Emitter Saturation Voltage
vs. Collector Current
100
10
1 10 100
IC, COLLECTOR CURRENT (mA)
Fig. 12 Typical Gain-Bandwidth Product vs. Collector Current
DMB54D0UV
Document number: DS31676 Rev. 5 - 2
5 of 7
www.diodes.com
March 2012
© Diodes Incorporated
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet DMB54D0UV.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| DMB54D0UDW | N-CHANNEL ENHANCEMENT MODE MOSFET PLUS PNP TRANSISTOR | Diodes |
| DMB54D0UV | N-CHANNEL ENHANCEMENT MODE MOSFET PLUS PNP TRANSISTOR | Diodes |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |