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RFPD2540 Schematic ( PDF Datasheet ) - RF Micro Devices

Teilenummer RFPD2540
Beschreibung Hybrid Power Doubler amplifier module
Hersteller RF Micro Devices
Logo RF Micro Devices Logo 




Gesamt 3 Seiten
RFPD2540 Datasheet, Funktion
RFPD2540
GaAs/GaN Power Doubler Hybrid
45MHz to 1218MHz
The RFPD2540 is a Hybrid Power Doubler amplifier module.
The part employs GaAs HFET die, GaAs pHemt die and GaN
HEMT die, has high output capability, and operates from
45MHz to 1218MHz. It provides excellent linearity and
superior return loss performance with low noise and optimal
reliability.
V+
INPUT
OUTPUT
Ordering Information
RFPD2540
Box with 50 pieces
Absolute Maximum Ratings
Parameter
RF Input Voltage (single tone)
DC Supply Over-Voltage (5 minutes)
Storage Temperature
Operating Mounting Base Temperature
Rating
75
30
-40 to +100
-30 to +100
Unit
dBmV
V
°C
°C
RFPD2540
Package: SOT-115J
Features
Excellent Linearity
Superior Return Loss Performance
Extremely Low Distortion
Optimal Reliability
Low Noise
Unconditionally Stable Under All
Terminations
Extremely High Output Capability
27.5dB Min. Gain at 1218MHz
450mA Max. at 24VDC
Applications
45MHz to 1218MHz CATV
Amplifier Systems
Caution! ESD sensitive device.
RoHS (Restriction of Hazardous
Substances): Compliant per EU Directive
2011/65/EU.
Exceeding any one or a combination of the Absolute
Maximum Rating conditions may cause permanent
damage to the device. Extended application of Absolute
Maximum Rating conditions to the device may reduce
device reliability. Specified typical performance or
functional operation of the device under Absolute
Maximum Rating conditions is not implied.
RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421
For sales or technical support, contact RFMD at +1.336.678.5570 or [email protected].
DS140922
RF MICRO DEVICES® and RFMD® are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names,
trademarks, and registered trademarks are the property of their respective owners. ©2013, RF Micro Devices, Inc.
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