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Número de pieza | RFMD2014 | |
Descripción | DIRECT QUADRATURE MODULATOR | |
Fabricantes | RF Micro Devices | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de RFMD2014 (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
No Preview Available ! RFMD2014
Direct Quadra-
ture Modula-
tor 1450MHz
to 2700MHz
RFMD2014
DIRECT QUADRATURE MODULATOR
1450MHz TO 2700MHz
Package: QFN, 24-Pin, 4mm x 4mm
Features
ACPR Performance: -70dBc Typ.
for 1-Carrier WCDMA
Very High Linearity: +26dBm
OIP3
Very Low Noise Floor:
-160 dBm/Hz
High Output Power: +11dBm
P1dB
Typical Carrier Feed-Through:
<-40 dBm
Single-Ended or Differential LO
Drive
Typical Sideband Suppression:
<-40 dBc
Single +5V Supply
Small 24-Pin, 4mmx4mm, QFN
Applications
Cellular, 3G Infrastructure
WiBro, WiMax, LTE
WiFI or WLL Systems
GMSK, QPSK, DQPSK, QAM
Modulation
24 23 22 21 20 19
NC 1
18 VCC2
GND 2
17 GND
LOP 3
LON 4
-45°
+45°
`
16 RFOUT
15 NC
GND 5
14 GND
NC 6
13 NC
7 8 9 10 11 12
Functional Block Diagram
Product Description
The RFMD2014 is direct quadrature modulator for use in cellular base
stations and other communications systems. RFMD2014 supports cellu-
lar, 3G, WiMax, and LTE air interface standards. This device features oper-
ation from 1450MHz to 2700MHz with excellent carrier and sideband
suppression and ultra low noise floor. The device is manufactured in an
advanced GaAs HBT process. The RFMD2014 operates from a single 5V
supply and is packaged in a low cost, 4mm x 4mm, 24-pin leadless pack-
age.
DS111121
Optimum Technology Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
BiFET HBT
LDMOS
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2011, RF Micro Devices, Inc.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
1 of 10
1 page RFMD2014
LO Port Return Loss
VCC 5V, LO 0dBm
0
‐5
‐10
‐15
Return
Loss (dB)
‐20
‐25
‐30
‐35
1.4
LO Port +25C
LO Port ‐40C
LO Port +85C
1.6
1.8
2 2.2 2.4 2.6 2.8
Freq (MHz)
4
3
2
1
Gain (dB)
0
‐1
‐2
‐3
‐10
‐10
‐15
‐20
‐25
LO
Feedthru‐ 30
(dBm)
‐35
‐40
‐45
‐50
‐55
‐60
0
Carrier Feedthrough vs IQ Drive
VCC 5V, LO 2100MHz 0dBm, IQ Bias 1.5V
Carrier Feedthrough +25C
Carrier Feedthrough ‐40C
Carrier Feedthrough +85C
‐10
‐15
‐20
‐25
Suppression
(dBc) ‐30
‐35
‐40
‐45
‐50
‐55
‐60
0.5 1 1.5 2 2.5 3
0
IQ Drive (Vpp SE)
CW Gain Compression vs Output Power
VCC 5V, LO 2100MHz 0dBm, IQ Bias 1.5V
Gain Compression +25C
Gain Compression ‐40C
Gain Compression +85C
‐5
05
Output Power (dBm)
10 15
Sideband Suppression vs IQ Drive
VCC 5V, LO 2100MHz 0dBm, IQ Bias 1.5V
Sideband Suppression +25C
Sideband Suppression ‐40C
Sideband Suppression +85C
0.5 1 1.5 2 2.5 3
IQ Drive (Vpp SE)
‐30
‐35
‐40
‐45
‐50
ACP (dBc)
‐55
‐60
‐65
‐70
‐75
‐80
‐20
WCDMA Adjacent Chan Pwr vs Channel Power
VCC 5V, LO 2100MHz 0dBm, IQ Bias 1.5V
‐140
‐145
‐15 ‐10
‐5
0
Channel Power (dBm)
ACP +25C
ACP ‐40C
ACP +85C
5
10
‐150
Output
Noise
(dBm/Hz)
‐155
‐160
‐165
‐20
Output Noise Floor vs Channel Power
VCC 5V, LO 2140MHz 0dBm, IQ Bias 1.5V, WCDMA
Noise Floor +25C
Noise Floor ‐40C
Noise Floor +85C
‐15 ‐10
‐5
0
Channel Power (dBm)
5 10
DS111121
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
5 of 10
5 Page |
Páginas | Total 10 Páginas | |
PDF Descargar | [ Datasheet RFMD2014.PDF ] |
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