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PDF RFPA2226 Data sheet ( Hoja de datos )
| Número de pieza | RFPA2226 | |
| Descripción | 2.2GHz TO 2.7GHz 2W InGaP AMPLIFIER | |
| Fabricantes | RF Micro Devices | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de RFPA2226 (archivo pdf) en la parte inferior de esta página. Total 17 Páginas | ||
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RFPA2226
2.2GHz to
2.7GHz 2W
InGaP AMPLI-
FIER
RFPA2226
2.2GHz TO 2.7GHz 2W InGaP AMPLIFIER
Package: QFN
Features
P1dB=33.5dBm at 5V, 2.4GHz
802.11g 54Mb/s Class AB
Performance
POUT=26dBm at 2.5% EVM,
VCC 5V
POUT=27dBm at 2.5% EVM,
VCC 6V
On-Chip Output Power Detector
Input Prematched to ~5
Proprietary Low Thermal
Resistance Package
Hand Solderable and Easy
Rework
Power Up/Down control <1s
Applications
802.16 WiMAX Driver or Output
Stage
2.4GHz 802.11 WiFi and ISM
Applications
RFPA2226
Functional Block Diagram
Product Description
RFMD’s RFPA2226 is a high linearity single stage class AB Heterojunction Bipolar
Transistor (HBT) amplifier housed in a proprietary surface-mountable plastic encap-
sulated package. This HBT amplifier is made with InGaP on GaAs device technology
and fabricated with MOCVD for an ideal combination of low cost and high reliability.
This product is specifically designed as a flexible final or driver stage for 802.16
and 802.11 equipment in the 2.2GHz to 2.7GHz bands. It can run from a 3V to 6V
supply. It is prematched to ~50 on the input for broadband performance and ease
of matching at the board level. It features an output power detector, on/off power
control, ESD protection, excellent overall robustness and a proprietary hand rework-
able and thermally enhanced QFN package. This product features a RoHS Compli-
ant and Green package with matte tin finish.
Ordering Information
RFPA2226SQ
RFPA2226SR
RFPA2226
RFPA2226-EVB1
RFPA2226-EVB2
Standard 25-piece bag
Standard 100-piece reel
Standard 1000-piece reel
Evaluation Board 2.4GHz to 2.5GHz Tune
Evaluation Board 2.5GHz to 2.7GHz Tune
DS121010
Optimum Technology Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
BiFET HBT
LDMOS
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2012, RF Micro Devices, Inc.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
1 of 17
1 page  
RFPA2226
Measured 2.4GHz to 2.5GHz Application Circuit Data
(VCC=VPC=5.0V IQ=445mA, T=25°C)
Narrowband S11 - Input Return Loss
Narrowband S12 - Reverse Isolation
0.0 -20.0
-40°C
-5.0
-22.0
+25°C
+85°C
-10.0
-24.0
-15.0
-26.0
-20.0
-28.0
-25.0
-30.0
-40°C
+25°C
+85°C
2.0 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3.0
Frequency (GHz)
Narrowband S21 - Forward Gain
15.0
14.0
13.0
12.0
11.0
10.0
9.0
8.0
7.0 -40°C
6.0 +25°C
+85°C
5.0
2.0 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3.0
Frequency (GHz)
DC Supply Current versus POUT, F=2.4GHz
1.1
1.0
0.9
0.8
0.7
0.6
0.5
-40°C
0.4 +25°C
+85°C
0.3
16.0 18.0 20.0 22.0 24.0 26.0 28.0 30.0 32.0 34.0
POUT (dBm)
-30.0
-32.0
2.0 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3.0
Frequency (GHz)
Narrowband S22 - Output Return Loss
0.0
-5.0
-10.0
-15.0
-20.0
-25.0
-40°C
+25°C
+85°C
2.0 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3.0
Frequency (GHz)
Noise Figure versus Frequency, O.T.
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.3
2.4 2.4 2.5
Frequency (GHz)
-40°C
+25°C
+85°C
2.5
DS121010
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
5 of 17
5 Page 
RFPA2226
Pin
1
2
3
4
5
6
Pkg Base
Name
VBIAS
RF IN
VPC
VDET
RF OUT/VCC
NC
GND
Pin Names and Descriptions
Description
This is the supply voltage for the active bias circuit.
This is the RF input pin and has a DC voltage present. An external DC block is required.
Power up/down control pin. The voltage on this pin should never exceed the voltage on pin 1 by more
than 0.5V unless the supply current from pin 3 is limited <10mA.
This is the output port for the power detector. It samples the power at the input of the amplifier.
This is the RF output pin and DC connection to the collector.
This pin is not connected internal to the package. Buss it to pin 5 as shown on the app circuit to achieve
the specified performance.
These pins are DC connected to the backside paddle. They provide good thermal connection to the back-
side paddle for hand soldering and rework. Many thermal and electrical GND vias are recommended as
shown in the landing pattern.
Package Drawing
Dimensions in millimeters (inches)
Refer to drawing posted at www.rfmd.com for tolerances.
DS121010
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
11 of 17
11 Page | ||
| Páginas | Total 17 Páginas | |
| PDF Descargar | [ Datasheet RFPA2226.PDF ] | |
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