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PDF EMB09N03A Data sheet ( Hoja de datos )
| Número de pieza | EMB09N03A | |
| Descripción | N-Channel Logic Level Enhancement Mode Field Effect Transistor | |
| Fabricantes | Excelliance MOS | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de EMB09N03A (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
30V
D
RDSON (MAX.)
9mΩ
ID 50A
UIS, Rg 100% Tested
G
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
EMB09N03A
LIMITS
UNIT
Gate‐Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
Avalanche Current
Avalanche Energy
Repetitive Avalanche Energy2
L = 0.1mH, ID=37.5A, RG=25Ω
L = 0.05mH
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
VGS
ID
IDM
IAS
EAS
EAR
PD
Tj, Tstg
±20
50
35
140
37.5
70
15
60
32
‐55 to 175
V
A
mJ
W
°C
100% UIS testing in condition of VD=15V, L=0.1mH, VG=10V, IL=25A, Rated VDS=25V N‐CH
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL
MAXIMUM
UNIT
Junction‐to‐Case
RJC
Junction‐to‐Ambient
RJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1％
2.5
°C / W
75
2010/1/25
p.1
1 page  
EMB09N03A
G A T E C H A R G E C H A R A C T E R IS T IC S
12
ID = 2 5 A
10 4
C A P A C IT A N C E C H A R A C T E R IS T IC S
10
8
6
4
VDS =5V
15V
10V
10 3
10 2
C iss
C o ss
C rss
2
0
0
10 20
30
Q g ,G A T E C H A R G E (n C )
f = 1 M H z
V GS= 0 V
0 5 10 15 20 25
V DS ‐D R A IN ‐S O U R C E V L T A G E ( V )
30
MAXIMUM SAFE OPERATING AREA
300
200
100 R d s ( o n ) Limit
50
10μ s
100μ s
1ms
20
10
5
D10C01m0sms
2
1
0.5
VG S = 10V
RSI θN J C G= L2E. 5P° UC/LWSE
Tc = 25 °C
0.5 1
23
5 10
VD S ,DRAIN‐ SOURCE VOLTAGE
20 30 50
1
Duty Cycle = 0.5
0.5
Transient Thermal Response Curve
0.3
0.2 0.2
0.1 0.1
0.05
0.05
0.02
0.03
0.01
0.02
Single Pulse
0.01
10‐2
10‐1
Notes:
DM
1.Duty Cycle,D =
t1
t2
2.Rθ J C =2.5°C/W
3.TJ ‐ T C = P * R θ J C (t)
4.Rθ J C (t)=r(t) * RθJC
1 10 100
t 1 ,Time (sec)
SINGLE PULSE MAXIMUM POWER DISSIPATION
3000
2500
SINGLE PULSE
Rθ J C = 2.5 °C/W
TC = 25° C
2000
1500
1000
500
0 0.01
0.1 1 10
SINGLE PULSE TIME (SEC)
100
1000
1000
2010/1/25
p.5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet EMB09N03A.PDF ] | |
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