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PDF WNM4001 Data sheet ( Hoja de datos )
| Número de pieza | WNM4001 | |
| Descripción | Small Signal N-Channel MOSFET | |
| Fabricantes | Will Semiconductor | |
| Logotipo |  |
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WNM4001
Small Signal N-Channel, 20V, 0.5A, MOSFET
V(BR)DSS
20 V
RDS(on) Max.
0.7ȍ@ 4.5V
0.85ȍ@ 2.5V
1.25ȍ@ 1.8V
ID MAX
0.5A
0.3A
0.1A
Descriptions
The WNM4001 is the N-Channel enhancement
MOS Field Effect Transistor, uses advanced trench
technology and design to provide excellent RDS(ON) with
low gate charge. This device is suitable for use in
small signal switch. Standard product WNM4001 is
Pb-free.
Features
z Trench N-Channel
z Supper high density cell design for extremely low
Rds(on)
z Exceptional ON resistance and maximum DC
current capability
z Small package design with SOT-523
WNM4001
Http://www.willsemi.com
Top
D
3
12
GS
SOT-523
D
3
12
GS
Pin Configuration
3
N3 *
12
N3 = Device Code
* = Month
Marking
Applications
z Driver: Relays, Solenoids, Lamps, Hammers
z Power supply converters circuit
z Load/Power Switching for potable device
Order Information
Device
Package
WNM4001-3/TR SOT-523
Shipping
3000/Tape&Reel
Will Semiconductor Ltd.
1
Nov, 2011 - Rev. 1.3
1 page  
WNM4001
100
80
Ciss
60
5
VDS = 10 V
ID = 250 mA
4
3
40
Coss
20
0 Crss
0
4 8 12 16
VDS - Drain-to-Source Voltage (V)
Capacitance
20
2
1
0
0.0 0.2 0.4 0.6 0.8
Qg - Total Gate Charge (nC)
Gate Charge
1000
TJ = 125 °C
100
TJ = 25 °C
TJ = - 55 °C
10
1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
10
Limited by RDS(on)*
IDM Limited
1
100 μs
0.1
ID(on)
Limited
1 ms
10 ms
0.01
TA = 25 °C
Single Pulse
100 ms
1 s, 10 s
DC
0.001
0.1
VDSS Limited
1 10
VDS - Drain-to-Source Voltage (V)
100
Safe Operation Area, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
10- 4
Notes:
PD
Single Pulse
10- 3
10- 2
10- 1
1
Square Wave Pulse Duration (s)
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 500 °C/W
3. TJM - TA = PDMZthJA(t)
4. Surface Mounted
10 100 600
Normalized Thermal Transient Impedance,
Junction-to-Ambient
Will Semiconductor Ltd.
5
Nov, 2011 - Rev. 1.3
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet WNM4001.PDF ] | |
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