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RF5722 Schematic ( PDF Datasheet ) - RF Micro Devices

Teilenummer RF5722
Beschreibung LINEAR POWER AMPLIFIER
Hersteller RF Micro Devices
Logo RF Micro Devices Logo 




Gesamt 10 Seiten
RF5722 Datasheet, Funktion
RF5722
3.0V TO 3.6V, 2.4GHz TO 2.5GHz
LINEAR POWER AMPLIFIER
Package Style: QFN, 8-Pin, 2.2mmx2.2mmx0.45mm
Features
Single Power Supply 3.0V to
3.6 V
24dB Minimum Gain
Input Matched to 50
2400MHz to 2500MHz Fre-
quency Range
+18dBm at <2.5% typ EVM,
120mA at 3.3VCC
Applications
IEEE802.11b/g/n WiFi Appli-
cations
2.5GHz ISM Band Applica-
tions
Commercial and Consumer
Systems
Portable Battery-Powered
Equipment
Spread-Spectrum and MMDS
Systems
8
RF IN 1
Input
Match
VREG 2
3
7
Interstage
Match
Bias Circuit
6 VC2
2Fo
Filter
Power
Detector
5 RF OUT
4
Functional Block Diagram
Product Description
The RF5722 is a linear, medium-power, high-efficiency, two-stage amplifier IC
designed specifically for battery-powered WiFi applications such as PC cards, mini
PCI, and compact flash applications. The device is manufactured on an advanced
InGaP Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has
been designed for use as the final RF amplifier in 2.5GHz OFDM and other spread-
spectrum transmitters. The device is provided in a 2.2mmx2.2mm, 8-pin, QFN with
a backside ground. The RF5722 is designed to maintain linearity over a wide range
of supply voltages and power outputs. The RF5722 also has built-in power detector
and incorporates the input, and interstage components internally which reduces
the component count used externally and makes it easier to incorporate on any
design.
DS110619
Ordering Information
RF5722
RF5722SR
RF5722TR7
RF5722PCK-410
Standard 25 piece bag
Standard 100 piece reel
Standard 2500 piece reel
Fully assembled evaluation board tuned for 2.4GHz to
2.5GHz and 5 loose sample pieces
Optimum Technology Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
RF MEMS
LDMOS
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
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RF5722 Datasheet, Funktion
RF5722
Theory of Operation and Application Information
The RF5722 is a two-stage power amplifier (PA) with a minimum gain of 24dB minimum gain in the 2.4GHz to 2.5GHz ISM
band. The RF5722 has integrated input, interstage and output matching components thus allowing minimal bill of material
(BOM) parts count in end applications. The RF5722 is designed primarily for IEEE802.11b/g/n WiFi applications where the
available supply voltage and current are limited. This amplifier will operate to (and below) the lowest expected voltage made
available by a typical PCMCIA slot in a laptop PC, and will maintain required linearity at decreased supply voltages.
The RF5722 requires only a single positive supply of 3.3V nominal (or greater) to operate to full specifications. Power control is
provided through one bias control input pin (VREG). DC blocking caps are provided internally and the evaluation board circuit
(available from RF Micro Devices, Inc. (RFMD)) is optimized for 3.3VDC applications.
For best results, the PA circuit layout from the evaluation board should be copied as closely as possible, particularly the ground
layout and ground vias. Pin 4 must be left as a no-connect on the PCB in order for the PA to work properly. Other configurations
may also work, but the design process is much easier and quicker if the layout is copied from the RF5722 evaluation board.
Gerber files of RFMD PCBA designs can be provided on request. The RF5722 is a very easy part to implement, but care in cir-
cuit layout and component selection is always advisable when designing circuits to operate at 2.5GHz. The RF5722 evaluation
board layout and schematic are available using 0201 (US) size components which will help shrink the overall size of the total
area of the PA and components of the intended design. Please contact RFMD Sales or Application Engineering for additional
data and guidance.
For best performance, it is important to duplicate (as closely as possible) the layout of the evaluation board. The RF5722 has
primarily been characterized with a voltage on VREG of 2.8VDC. If you prefer to use a control voltage that is significantly differ-
ent than 2.8VDC, or a different frequency than the recommended frequency range, contact RFMD Sales or Applications Engi-
neering for additional data and guidance.
QFN8 Package Area versus Other Small Form Factor Package Areas
Package Type Length (mm) Width (mm) Area (mm2) Delta () (mm2) to QFN8
SOT 23-6
3.1
3.0 9.30
4.46
QFN12 3.0 3.0 9.00
4.16
SOT 23-5
2.9
2.8 8.12
3.28
QFN8 2.2 2.2 4.84
0.00
An application schematic for 2.5GHz operation is included that has two additional components, one shunt inductor, and one
shunt capacitor, on the output for improved second harmonic rejection. This layout provides ~20dB rejecetion at 5GHz with a
minimal BOM count.
6 of 10
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
DS110619

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