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PDF RF5632 Data sheet ( Hoja de datos )
| Número de pieza | RF5632 | |
| Descripción | LINEAR POWER AMPLIFIER | |
| Fabricantes | RF Micro Devices | |
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Hay una vista previa y un enlace de descarga de RF5632 (archivo pdf) en la parte inferior de esta página. Total 18 Páginas | ||
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RF5632Single
5.0V, 2.3 to
2.7 GHz Linear
Power Ampli-
fier
RF5632
SINGLE 5.0V, 2.3 TO 2.7 GHZ
LINEAR POWER AMPLIFIER
Package Style: QFN, 24-Pin, 4mmx4mmx0.9mm
24 23 22 21 20 19
Features
34dB Small Signal Gain (Typ.)
High Gain; 34dB
2.5% EVM WiMAX
+28.5dBm, 5.0V
2.5% EVM WLAN at 28.5dBm,
5.0 V
Multiple Frequency Ranges
High Efficiency
Applications
IEEE 802.11b/g/n WiFi Systems
2.4GHz ISM Band Applications
Commercial and Consumer
Systems
WiBro 2.3GHz to 2.4GHz Band
Applications
WiFi 2.4GHz to 2.5GHz Band
Applications
WiMAX 2.5GHz to 2.7GHz Band
Applications
N/C 1
18 RF OUT
N/C 2
RFIN 3
Input
Match
N/C 4
Interstage
Match
Interstage
Match
17 RF OUT
16 RFOUT
15 RFOUT
N/C 5
VREG1 6
14 N/C
Bias
Power
Detector
13 N/C
7 8 9 10 11 12
Functional Block Diagram
Product Description
The RF5632 is a linear power amplifier IC designed specifically for WiMAX
or WLAN final or driver stage applications. The device is manufactured on
an advanced InGaP Heterojunction Bipolar Transistor (HBT) process, and
is provided in a leadless chip carrier with a backside ground. The RF5632
is designed to maintain linearity over a wide range of temperatures and
power outputs. The external match offers tunability for output power over
multiple bands. RF5632 features internal input and interstage match, Low
Gain mode, and output power detector.
DS120213
Optimum Technology Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
RF MEMS
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
1 of 18
1 page  
RF5632
Pin
3
6
7
9
10
15-18
19
21
22
1, 2, 4,
5, 8, 11,
12, 13, 14,
20, 23, 24
Pkg Base
Function
RFIN
VREG1
VREG2
VREG3
PDET
VCC3/RFOUT
VCC2
VCC1
VBIAS
N/C
Description
RF input. This pin is matched to 50and in DC-blocked internally.
First stage input bias voltage. This pin requires a regulated supply to maintain nominal bias current.
Second stage input bias voltage. This pin requires a regulated supply to maintain nominal bias current.
Third stage input bias voltage. This pin requires a regulated supply to maintain nominal bias current.
Power detector provides and output voltage proportional to the RF level VCC3/RF OUT.
RF output and bias for the third stage. Output is externally matched to 50 and needs DC block.
Second stage supply voltage.
First stage supply voltage.
Supply voltage for te bias reference and control circuits. May be connected with VCC1, VCC2, VCC3 as
long as appropriate isolation is provided.
No internal connection. May be connected to ground.
GND
Ground connection. The back side of the package should be connected to the ground plane through as
short a connection as possible, e.g., PCB vias under the device.
DS120213
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
5 of 18
5 Page 
RF5632
Back
DS120213
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
11 of 18
11 Page | ||
| Páginas | Total 18 Páginas | |
| PDF Descargar | [ Datasheet RF5632.PDF ] | |
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