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PDF DMP31D0UFB4 Data sheet ( Hoja de datos )
| Número de pieza | DMP31D0UFB4 | |
| Descripción | P-CHANNEL ENHANCEMENT MODE MOSFET | |
| Fabricantes | Diodes | |
| Logotipo |  |
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A Product Line of
Diodes Incorporated
DMP31D0UFB4
30V P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS
-30V
Max RDS(on)
1Ω @ VGS = -4.5V
1.5Ω @ VGS = -2.5V
2Ω @ VGS = -1.8V
Max ID
@ TA = 25°C
-0.76A
-0.62A
-0.54A
Description and Applications
This MOSFET has been designed to minimize the on-state resistance
(RDS(on)) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
• Load Switch in portable electronics
X2-DFN1006-3
Features and Benefits
• Footprint of just 0.6mm2 – thirteen times smaller than SOT23
• 0.4mm profile – ideal for low profile applications
• Low Gate Threshold Voltage
• Fast Switching Speed
• ESD Protected Gate 2KV
• “Lead Free”, RoHS Compliant (Note 1)
• Halogen and Antimony Free. "Green" Device (Note 2)
• Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case: X2-DFN1006-3
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Finish – NiPdAu over Copper leadframe. Solderable
per MIL-STD-202, Method 208
• Weight: 0.001 grams (approximate)
Drain
Bottom View
S
D
G
Top View
Internal Schematic
Gate
Gate
Protection
Diode
Source
Equivalent Circuit
Ordering Information (Note 3)
Part Number
DMP31D0UFB4-7B
Marking
P6
Reel size (inches)
7
Notes:
1. No purposefully added lead
2. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com.
3. For packaging details, go to our website at http://www.diodes.com.
Tape width (mm)
8
Quantity per reel
10,000
Marking Information
DMP31D0UFB4
Datasheet number: DS35587 Rev. 1 - 2
DMP31D0UFB4-7B
P6 P6 = Product Type Marking Code
Top View
Bar Denotes Gate
And Source Side
1 of 7
www.diodes.com
January 2012
© Diodes Incorporated
1 page  
1.0
0.8
0.6
0.4
0.2
0
0.4
0.6 0.8 1.0 1.2
-VSD, SOURCE-DRAIN VOLTAGE (V)
Fig. 11 Diode Forward Voltage vs. Current
100,000
10,000
TA = 150°C
1,000
100
TA = 125°C
TA = 85°C
10
TA = 25°C
1
0.1
0 5 10 15 20 25 30
-VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 13 Typical Drain-Source Leakage Current vs. Voltage
A Product Line of
Diodes Incorporated
DMP31D0UFB4
120
100
f = 1MHz
80
Ciss
60
40
20
Coss
0 Crss
0 5 10 15 20 25 30
-VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 12 Typical Junction Capacitance
8
6
4
2
0
0 0.4 0.8 1.2 1.6 2.0
Qg, TOTAL GATE CHARGE (nC)
Fig. 14 Gate-Charge Characteristics
DMP31D0UFB4
Datasheet number: DS35587 Rev. 1 - 2
5 of 7
www.diodes.com
January 2012
© Diodes Incorporated
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet DMP31D0UFB4.PDF ] | |
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