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PDF DMP21D0UT Data sheet ( Hoja de datos )
| Número de pieza | DMP21D0UT | |
| Descripción | P-CHANNEL ENHANCEMENT MODE MOSFET | |
| Fabricantes | Diodes | |
| Logotipo |  |
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Product Summary
V(BR)DSS
-20V
RDS(on) Max
495mΩ @ VGS = -4.5V
690mΩ @ VGS = -2.5V
960mΩ @ VGS = -1.8V
ID Max
@ TA = 25°C
(Note 4)
-0.59A
-0.50A
-0.42A
Description and Applications
This MOSFET has been designed to minimize the on-state resistance
(RDS(on)) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
• Portable electronics
A Product Line of
Diodes Incorporated
DMP21D0UT
20V P-CHANNEL ENHANCEMENT MODE MOSFET
Features and Benefits
• Footprint of just 3mm2 – less than half the size of SOT23
• 0.8mm profile – ideal for low profile applications
• Low Gate Threshold Voltage
• Fast Switching Speed
• ESD Protected Gate 3KV
• Totally Lead-Free & Fully RoHS compliant (Note 1)
• Halogen and Antimony Free. “Green” Device (Note 2)
• Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case: SOT523
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Matte Tin Finish ; Solderable per MIL-STD-202,
Method 208
• Weight: 0.002 grams (approximate)
Drain
SOT523
D
Gate
ESD PROTECTED TO 3kV
Bottom View
GS
Top View
Internal Schematic
Gate
Protection
Diode
Source
Equivalent Circuit
Ordering Information (Note 3)
Part Number
DMP21D0UT-7
Marking
PBC
Reel size (inches)
7
Tape width (mm)
8
Quantity per reel
3,000
Notes:
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. No purposely added lead. Halogen and Antimony free.
2. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com.
3. For packaging details, go to our website at http://www.diodes.com.
Marking Information
Date Code Key
Year
Code
Month
Code
2011
Y
Jan Feb
12
DMP21D0UT
Datasheet Number: DS35297 Rev. 2 - 2
PBC YM
PBC = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: Y = 2011)
M = Month (ex: 9 = September)
2012
Z
Mar
3
2013
A
Apr May
45
2014
B
Jun Jul
67
1 of 7
www.diodes.com
2015
C
Aug
8
Sep
9
2016
D
Oct
O
2017
E
Nov Dec
ND
March 2012
© Diodes Incorporated
1 page  
10,000
100,000
A Product Line of
Diodes Incorporated
DMP21D0UT
1,000
100
TA = 150°C
TA = 125°C
TA = 85°C
10
TA = 25°C
1
04
8 12 16 20
-VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 11 Typical Leakage Current vs. Drain-Source Voltage
100,000
10,000
1,000
TA = 125°C
TA = 150°C
100
10
1
TA = 85°C
TA = 25°C
TA = -55°C
10,000
1,000
TA = 150°C
TA = 125°C
100
10
1
TA = 85°C
TA = 25°C
TA = -55°C
0.1
02 468
VGS, GATE-SOURCE VOLTAGE (V)
Fig.12 Leakage Current vs. Gate-Source Voltage
1,000
f = 1MHz
100
10
Ciss
Coss
Crss
0.1
02 468
VGS, GATE-SOURCE VOLTAGE (V)
Fig.13 Leakage Current vs. Gate-Source Voltage
8
7
1
0 2 4 6 8 10 12 14 16 18 20
-VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 14 Typical Junction Capacitance
6
5
4
3
2
1
0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Qg, TOTAL GATE CHARGE (nC)
Fig. 15 Gate-Charge Characteristics
DMP21D0UT
Datasheet Number: DS35297 Rev. 2 - 2
5 of 7
www.diodes.com
March 2012
© Diodes Incorporated
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet DMP21D0UT.PDF ] | |
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