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Número de pieza | DMN2100UDM | |
Descripción | N-CHANNEL ENHANCEMENT MODE MOSFET | |
Fabricantes | Diodes | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de DMN2100UDM (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! Product Summary
V(BR)DSS
20V
RDS(ON) max
55mΩ @ VGS = 4.5V
70mΩ @ VGS = 2.5V
90mΩ @ VGS = 1.8V
130mΩ @ VGS = 1.5V
ID max
TA = 25°C
4.0A
3.5A
3.1A
2.5A
Description and Applications
This new generation MOSFET has been designed to minimize the on-
state resistance (RDS(on)) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
• General Purpose Interfacing Switch
• Power Management Functions
DMN2100UDM
N-CHANNEL ENHANCEMENT MODE MOSFET
Features and Benefits
• Low On-Resistance
• Low Gate Threshold Voltage
• Low Input Capacitance
• Fast Switching Speed
• ESD Protected Gate
• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case: SOT26
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminal Connections: See Diagram
• Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
• Weight: 0.015 grams (approximate)
SOT26
DD
S
ESD PROTECTED
Top View
DD G
Top View
Internal Schematic
Ordering Information (Note 4)
Notes:
Part Number
DMN2100UDM-7
Case
SOT26
Packaging
3000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com..
Marking Information
2N1
2N1 = Marking Code
YM = Date Code Marking
Y = Year (ex: U = 2007)
M = Month (ex: 9 = September)
Date Code Key
Year
2007
Code
U
Month
Code
Jan
1
2008
V
Feb
2
2009
W
Mar
3
2010
X
Apr
4
2011
Y
2012
Z
2013
A
May Jun
56
Jul Aug
78
2014
B
Sep
9
2015
C
Oct
O
2016
D
Nov
N
2017
E
Dec
D
DMN2100UDM
Document number: DS31186 Rev. 5 - 2
1 of 6
www.diodes.com
May 2012
© Diodes Incorporated
1 page DMN2100UDM
Package Outline Dimensions
A
BC
H
K
J
D
L
M
SOT26
Dim Min Max Typ
A 0.35 0.50 0.38
B 1.50 1.70 1.60
C 2.70 3.00 2.80
D ⎯ ⎯ 0.95
H 2.90 3.10 3.00
J 0.013 0.10 0.05
K 1.00 1.30 1.10
L 0.35 0.55 0.40
M 0.10 0.20 0.15
α 0° 8° ⎯
All Dimensions in mm
Suggested Pad Layout
C2 C2
G
Z
Y
X
C1
Dimensions
Z
G
X
Y
C1
C2
Value (in mm)
3.20
1.60
0.55
0.80
2.40
0.95
DMN2100UDM
Document number: DS31186 Rev. 5 - 2
5 of 6
www.diodes.com
May 2012
© Diodes Incorporated
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet DMN2100UDM.PDF ] |
Número de pieza | Descripción | Fabricantes |
DMN2100UDM | N-CHANNEL ENHANCEMENT MODE MOSFET | Diodes |
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