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Número de pieza | RBR1L40A | |
Descripción | Schottky Barrier Diode | |
Fabricantes | ROHM Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de RBR1L40A (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! Schottky Barrier Diode
RBR1L40A
lApplication
General rectification
lDimensions (Unit : mm)
2.6±0.15
Data Sheet
lLand Size Figure (Unit : mm)
2.0
lFeatures
1) Small power mold type
(PMDS)
2) High reliability
3) Low VF
12
1.5±0.2
0.1±0.02
2.0±0.2
PMDS
lStructure
Cathode
ROHM : PMDS
JEDEC : SOD-106
1 2 : Manufacture Date
lConstruction
lTaping Dimensions (Unit : mm)
Silicon epitaxial planar type
2.0±0.05
4.0±0.1
fφ 1.55±0.05
Anode
0.3
2.9±0.1
4.0±0.1
fφ 1.55
2.8MAX
lAbsolute Maximum Ratings (Tc= 25°C)
Parameter
Symbol
Conditions
Limits Unit
Repetitive peak reverse voltage
VRM
Duty≦0.5
40 V
Reverse voltage
VR Direct reverse voltage
Average forward rectified current
Non-repetitive forward current surge peak
Io
IFSM
Glass epoxy board mounted, 60Hz half sin wave,
resistive load , Tc=131ºC Max.
60Hz half sin wave, one cycle,
non-repetitive at Ta=25ºC
Operating junction temperature
Tj
-
40
1
30
150
V
A
A
°C
Storage temperature
Tstg
- -55 to +150 °C
lElectrical Characteristics (Tj= 25°C)
Parameter
Symbol
Forward voltage
VF
Reverse current
IR
Conditions
IF=1.0A
VR=40V
Min. Typ. Max. Unit
- - 0.52 V
- - 50 mA
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
1/5
2015.03 - Rev.A
1 page RBR1L40A
lElectrical Characteristic Curves
Data Sheet
0.8
Tj = 150°C
0.7
0.6
0.5
0.4 DC
0.3 D = 1/2
0.2 Sin(θ=180)
0.1
0
0 10 20 30
REVERSE VOLTAGE : VR (V)
VR-PR CHARACTERISTICS
40
3.0
2.5
2.0 DC
Glass epoxy board mounted
IO
0A
0V
VR t
T
D=t/T
VR=VRM/2
Tj=150°C
1.5
D = 1/2
1.0
0.5 Sin(θ=180)
0.0
0
25 50 75 100 125 150
AMBIENT TEMPERATURE : Ta (°C)
DERATING CURVE (Io-Ta)
3.0
2.5
2.0 DC
Glass epoxy board mounted
IO
0A
0V
VR t
T
D=t/T
VR=VRM/2
Tj=150°C
1.5
D = 1/2
1.0
0.5 Sin(θ=180)
0.0
0
25 50 75 100 125
CASE TEMPERATURE : Tc (°C)
DERATING CURVE (Io-Tc)
150
30
No destruction at 30kV
25
20
15
AVE. : 7.5kV
10
5
0 C=200pF
R=0W
C=100pF
R=1.5kW
ESD DISPERSION MAP
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
5/5
2015.03 - Rev.A
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet RBR1L40A.PDF ] |
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