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Teilenummer | RB521ES-30 |
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Beschreibung | Schottky Barrier Diode | |
Hersteller | ROHM Semiconductor | |
Logo | ||
Gesamt 3 Seiten RB521ES-30
Schottky Barrier Diode
Datasheet
●Applications
General rectification
●Dimensions (Unit : mm)
●Land Size Figure (Unit : mm)
0.31
●Features
1) Small silicon package (SMD0603)
2) High Accuracy Manufacturing
Dimension tolerance±10um
3) Low VF
●Construction
Silicon epitaxial planar type
0~0.030
0.280±0.010
0.260±0.010
0.300±0.010
SMD0603
●Structure
Cathode
ROHM:SMD0603
●Taping Dimensions (Unit : mm)
Anode
●Absolure Maximum Ratings (Ta=25oC)
Parameter
Symbol
Conditions
Repetitive Peak Reverse Voltage VRM
Duty≦0.5
Reverse Voltage
Average forward rectified current
Non-repetitive Forward Current Surge Peak
Operating Junction Temperature
VR
IO
IFSM
Tj
Direct Reverse Voltage
Glass epoxy board mounted, 60Hz half sin
wave, resistive load, Tc=110ºC Max.
60Hz half sin wave, one cycle, non-repetitive
at Ta=25ºC
-
Storage Temperature
Tstg
-
●Electrical Characteristics (Tj=25℃)
Parameter
Symbol
Forward Voltage
VF
Reverse Current
IR
Conditions
IF=10mA
VR=10V
Limits
30
30
100
500
150
-40~+150
Min. Typ.
- 350
- 1.2
Unit
V
V
mA
mA
ºC
ºC
Max.
370
7
Unit
mV
μA
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
1/2
2015.07 - Rev.A
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Seiten | Gesamt 3 Seiten | |
PDF Download | [ RB521ES-30 Schematic.PDF ] |
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