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Teilenummer | RF601BM2D |
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Beschreibung | Super Fast Recovery Diode | |
Hersteller | ROHM Semiconductor | |
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Gesamt 5 Seiten Super Fast Recovery Diode
RF601BM2D
Data Sheet
lSerise
Standard Fast Recovery
lDimensions (Unit : mm)
lLand Size Figure (Unit : mm)
6.0
lApplication
General rectification
1
lFeatures
1) Cathode common dual type
2) Low switching loss
3) Low forward voltage
ROHM : TO-252
JEITA : SC-63
1 : Manufacture Date
lTaping Dimensions (Unit : mm)
2.0±0.05
4.0±0.1
8.0±0.1
lConstruction
Silicon epitaxial planar type
TL
1.6 1.6
TO-252 2.3 2.3
lStructure
Cathode
φ 1.55±0.1
f 1. 5 5 00.1
Anode Anode
0.4±0.1
6.8±0.1
8.0±0.1
fφ3.30.00±.10.1
2.7±0.2
lAbsolute Maximum Ratings (Tc= 25°C)
Parameter
Symbol
Conditions
Limits Unit
Repetitive peak reverse voltage
VRM
Duty≦0.5
200 V
Reverse voltage
Average rectified foward current
Forward current surge peak
Operating junction temperature
VR
Io
IFSM
Tj
Direct voltage
60Hz half sin wave , Resistive load
1/2Io per diode
Tc=109°C
60Hz half sin wave,
Non-repetitive at Tj=25°C, per diode
-
200
6
60
150
V
A
A
°C
Storage temperature
Tstg
- -55 to +150 °C
lElectrical Characteristics (Tj = 25°C, per diode)
Parameter
Symbol
Conditions
Min. Typ. Max. Unit
Forward voltage
Reverse current
Reverse recovery time
Thermal resistance
VF
IR
trr
Rth(j-c)
IF=3A
VR=200V
IF=0.5A, IR=1A, Irr=0.25×IR
Junction to case
- 0.87 0.93 V
- 0.05 10 mA
- 14 25 ns
- - 6.0 °C / W
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1/4
2014.07 - Rev.A
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Seiten | Gesamt 5 Seiten | |
PDF Download | [ RF601BM2D Schematic.PDF ] |
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