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PDF DBD250G Data sheet ( Hoja de datos )
| Número de pieza | DBD250G | |
| Descripción | 25.0A Single-Phase Bridge Rectifier | |
| Fabricantes | ON Semiconductor | |
| Logotipo |  |
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Ordering number : ENA1204A
DBD250G
25.0A Single-Phase Bridge Rectifier
http://onsemi.com
Features
• Plastic molded structure
• Glass passivation for high reliability
• Peak reverse voltage : VRM=600V
• Average output current : IO=25.0A
Specifications
Absolute Maximum Ratings at Tc=25°C
Parameter
Peak Reverse Voltage
Symbol
VRM
Average Output Current
IO
Surge Forward Current
Junction Temperature
Storage Temperature
Dilective Strength Voltage
IFSM
Tj
Tstg
VIS
Conditions
Ta=40°C
Ta=40°C, With 300✕300✕3.0mm3 Cu fin
50Hz sine wave, 1cycle
Terminals tc case, AC 1 minute
Raitings
600
6.0
25.0
400
150
--40 to +150
2
Unit
V
A
A
A
°C
°C
kV
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,
damage may occur and reliability may be affected.
Electrical Characteristics at Tc=25°C *Per Constituent element of bridge.
Parameter
Symbol
Conditions
Forward Voltage
Reverse Current
VF
IR
Thremal Resistance
Rth(j-c)
Note) Maximum tightening torque : 0.98Nm
IF=12.5A*
VR:At each VRM*
Junction-Case
Raitings
min typ max
Unit
1.05
V
10 mA
1.5 °C / W
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be
indicated by the Electrical Characteristics if operated under different conditions.
Package Dimensions
unit:mm(typ.)
32.0 MAX
9
7.95
3.4
2.5 MIN
1.5
4.9
14.4
1.65 2.4
10.0
11.0
23.0 MAX
Semiconductor Components Industries, LLC, 2014
April, 2014
42814HK/73008TIIM TA-0858 RB No. A1204-1/2
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet DBD250G.PDF ] | |
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