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Teilenummer | E35A2CBS |
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Beschreibung | STACK SILICON DIFFUSED DIODE | |
Hersteller | KEC | |
Logo | ||
Gesamt 1 Seiten SEMICONDUCTOR
TECHNICAL DATA
ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION.
FEATURES
Average Forward Current : IO=35A.
Repetive Peak Reverse Voltage : VRRM=200V
POLARITY
E35A2CBS E35A2CBR
(+ Type) (- Type)
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Average Forward Current
Peak 1 Cycle Surge Current
Repetitive Peak Revese Voltage
Junction Temperature
IF(AV)
IFSM
VRRM
Tj
Storage Temperature Range
Tstg
RATING
35
300 (60Hz)
200
-40 215
-40 215
UNIT
A
A
V
E35A2CBS, E35A2CBR
STACK SILICON DIFFUSED DIODE
A
K
H
EI
JD
DIM
A
B
C
D
E
F
G
H
I
J
K
MILLIMETERS
Φ11.5 MAX
Φ12.75+0.09-0.00
Φ1.3+_ 0.04
4.2+_ 0.2
8.0+_ 0.2
TYP 0.5
Φ10.0+_ 0.2
0.4+_ 0.1x45
8.5 MAX
0.2+0.1
28.35+_ 0.5
F
G
B
B-PF
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Forward Voltage
Reverse Voltage
Reverse Current
VF
VR
IR
Transient Thermal Resistance
Reverse Leakage Current Under
High Temperature
Reverse Recovery Time
VF
HIR
trr
Temperature Resistance
Rth
TEST CONDITION
IFM=100A
IR=5mA
VR=200V
IFM=100A, IM=100mA, Pw=100ms
Ta=150 , VR=200V
IF=0.1A, IR=0.1A
DC total Junction to case
MIN.
-
200
-
-
-
-
-
TYP.
-
-
-
-
-
-
-
MAX.
1.10
-
50
100
UNIT
V
V
A
mV
2.5 mA
15 s
0.8 /W
2002. 4. 9
Revision No : 2
1/1
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Seiten | Gesamt 1 Seiten | |
PDF Download | [ E35A2CBS Schematic.PDF ] |
Teilenummer | Beschreibung | Hersteller |
E35A2CBR | STACK SILICON DIFFUSED DIODE (ALTERNATOR DIODE FOR AUTOMOTIVE) | KEC(Korea Electronics) |
E35A2CBR | STACK SILICON DIFFUSED DIODE | KEC |
E35A2CBS | STACK SILICON DIFFUSED DIODE (ALTERNATOR DIODE FOR AUTOMOTIVE) | KEC(Korea Electronics) |
E35A2CBS | STACK SILICON DIFFUSED DIODE | KEC |
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