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PDF P2003BVG Data sheet ( Hoja de datos )
| Número de pieza | P2003BVG | |
| Descripción | N-Channel Enhancement Mode Field Effect Transistor | |
| Fabricantes | Niko | |
| Logotipo |  |
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NIKO-SEM
N-Channel Enhancement Mode Field
Effect Transistor
P2003BVG
SOP-8
Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30 20m
ID
8A
D
G
S
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 70 °C
Power Dissipation
TC = 25 °C
TC = 70 °C
Junction & Storage Temperature Range
Lead Temperature (1/16” from case for 10 sec.)
VDS
VGS
ID
IDM
PD
Tj, Tstg
TL
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction-to-Ambient
RθJA
1Pulse width limited by maximum junction temperature.
2Duty cycle ≤ 1%
TYPICAL
G : GATE
D : DRAIN
S : SOURCE
LIMITS
30
±20
8
6
32
2.5
1.6
-55 to 150
275
UNITS
V
V
A
W
°C
MAXIMUM
50
UNITS
°C / W
ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current1
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(ON)
STATIC
VGS = 0V, ID = 250µA
VDS = VGS, ID = 250µA
VDS = 0V, VGS = ±20V
VDS = 24V, VGS = 0V
VDS = 20V, VGS = 0V, TJ = 55 °C
VDS = 5V, VGS = 10V
LIMITS
UNIT
MIN TYP MAX
30
1 1.5 2.5
V
±100 nA
1
µA
10
8A
1 JUL-25-2005
1 page  
NIKO-SEM
N-Channel Enhancement Mode Field
Effect Transistor
P2003BVG
SOP-8
Lead-Free
SOIC-8(D) MECHANICAL DATA
Dimension
A
B
C
D
E
F
G
Min.
4.8
3.8
5.8
0.38
1.35
0.1
mm
Typ.
4.9
3.9
6.0
0.445
1.27
1.55
0.175
Max.
5.0
4.0
6.2
0.51
1.75
0.25
Dimension
H
I
J
K
L
M
N
Min.
0.5
0.18
0°
mm
Typ.
0.715
0.254
0.22
4°
Max.
0.83
0.25
8°
F
I
GH
DE
J
K
BC
A
5 JUL-25-2005
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet P2003BVG.PDF ] | |
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