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What is DF10G6M4N?

This electronic component, produced by the manufacturer "Toshiba Semiconductor", performs the same function as "Diode ( Rectifier )".


DF10G6M4N Datasheet PDF - Toshiba Semiconductor

Part Number DF10G6M4N
Description Diode ( Rectifier )
Manufacturers Toshiba Semiconductor 
Logo Toshiba Semiconductor Logo 


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TOSHIBA Diodes for Protecting against ESD
DF10G6M4N
Application
- ESD Protection
Note: This product is designed for protection against electrostatic discharge
(ESD) and is not intended for any other purpose, including, but not limited to,
voltage regulation.
Absolute Maximum Ratings (Ta = 25°C)
DF10G6M4N
Characteristic
Symbol Rating
Unit
Electrostatic discharge voltage
IEC61000-4-2(Contact)
IEC61000-4-2(Air)
VESD
(Note 1)
±23
kV
Peak pulse power ( tp = 8 / 20 s )
Maximum peak pulse current ( tp = 8 / 20 s )
Junction temperature
Storage temperature range
PPK
IPP
(Note 2)
Tj
Tstg
30
2
150
-55~150
W
A
°C
°C
DFN10
1:I/O 6:NC
2:I/O 7:NC
3:GND 8:NC
4:I/O 9:NC
5:I/O 10:NC
Note1 : according to IEC61000-4-2
Note2 : according to IEC61000-4-5
JEDEC
Note3:Using continuously under heavy loads (e.g. the application of high JEITA
temperature/current/voltage and the significant change in temperature,
etc.) may cause this product to decrease in the reliability significantly even
TOSHIBA
if the operating conditions (i.e. operating temperature/current/voltage, etc.) Weight: 3.2mg (typ.)
are within the absolute maximum ratings.Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/ “Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate, etc).

Electrical Characteristics (Ta = 25°C)
VRWM : Working peak reverse voltage
VBR : Reverse breakdown voltage
IBR : Reverse breakdown current
IR : Reverse Current
VC : Clamping Voltage
IPP : Peak pulse current
RDYN : Dynamic resistance
1 2015-09-29

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DF10G6M4N equivalent
Insertion Loss (S21)
S21-f
DF10G6M4N
Ta=25
Frequency (GHz)
IN
SG
S21
OUT
Network
DUT Analyzer
Fig. S21 measurement circuit
Note: The above characteristics curves are presented for reference only and not guaranteed by production test,
unless otherwise noted.
5 2015-09-29


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Part Details

On this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for DF10G6M4N electronic component.


Information Total 8 Pages
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Featured Datasheets

Part NumberDescriptionMFRS
DF10G6M4NThe function is Diode ( Rectifier ). Toshiba SemiconductorToshiba Semiconductor

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