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Teilenummer | PESD5V0V2BM |
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Beschreibung | Very low capacitance bidirectional ESD protection diodes | |
Hersteller | NXP Semiconductors | |
Logo | ||
Gesamt 12 Seiten PESD5V0V2BM
Very low capacitance bidirectional ESD protection diodes
14 August 2015
Product data sheet
1. General description
Two bidirectional ElectroStatic Discharge (ESD) protection diodes designed to protect
two signal lines from damage caused by ESD and other transients. The device is housed
in a DFN1006-3 (SOT883) leadless ultra small Surface-Mounted Device (SMD) plastic
package.
2. Features and benefits
• Bidirectional ESD protection of two lines
• Ultra small SMD plastic package
• ESD protection up to 30 kV; IEC 61000-4-2
• IPPM = 9 A; IEC 61000-4-5 (surge)
• Ultra low leakage current: IRM = 1 nA
• AEC-Q101 qualified
3. Applications
• Computers and peripherals
• Audio and video equipment
• Cellular handsets and accessories
• Communication systems
• Portable electronics
4. Quick reference data
Table 1.
Symbol
VRWM
Cd
Quick reference data
Parameter
reverse standoff
voltage
diode capacitance
Conditions
Tamb = 25 °C
f = 1 MHz; VR = 0 V; Tamb = 25 °C
Min Typ Max Unit
- - 5V
- 18 20 pF
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NXP Semiconductors
PESD5V0V2BM
Very low capacitance bidirectional ESD protection diodes
10. Application information
The device is designed for the protection of up to two bidirectional data lines from surge
pulses and ESD damage.
Fig. 10. Application diagram
signal lines
DUT
GND
006aab332
Circuit board layout and protection device placement
Circuit board layout is critical for the suppression of ESD, Electrical Fast Transient (EFT)
and surge transients. The following guidelines are recommended:
1. Place the device as close to the input terminal or connector as possible.
2. Minimize the path length between the device and the protected line.
3. Keep parallel signal paths to a minimum.
4. Avoid running protected conductors in parallel with unprotected conductors.
5. Minimize all Printed-Circuit Board (PCB) conductive loops including power and
ground loops.
6. Minimize the length of the transient return path to ground.
7. Avoid using shared transient return paths to a common ground point.
8. Use ground planes whenever possible. For multilayer PCBs, use ground vias.
11. Test information
11.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
PESD5V0V2BM
Product data sheet
All information provided in this document is subject to legal disclaimers.
14 August 2015
© NXP Semiconductors N.V. 2015. All rights reserved
6 / 12
6 Page NXP Semiconductors
PESD5V0V2BM
Very low capacitance bidirectional ESD protection diodes
16. Contents
1 General description ............................................... 1
2 Features and benefits ............................................1
3 Applications ........................................................... 1
4 Quick reference data ............................................. 1
5 Pinning information ............................................... 2
6 Ordering information ............................................. 2
7 Marking ................................................................... 2
8 Limiting values .......................................................2
9 Characteristics ....................................................... 3
10 Application information .........................................6
11 Test information ..................................................... 6
11.1 Quality information ............................................... 6
12 Package outline ..................................................... 7
13 Soldering ................................................................ 8
14 Revision history ..................................................... 9
15 Legal information .................................................10
15.1 Data sheet status ............................................... 10
15.2 Definitions ...........................................................10
15.3 Disclaimers .........................................................10
15.4 Trademarks ........................................................ 11
© NXP Semiconductors N.V. 2015. All rights reserved
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 14 August 2015
PESD5V0V2BM
Product data sheet
All information provided in this document is subject to legal disclaimers.
14 August 2015
© NXP Semiconductors N.V. 2015. All rights reserved
12 / 12
12 Page | ||
Seiten | Gesamt 12 Seiten | |
PDF Download | [ PESD5V0V2BM Schematic.PDF ] |
Teilenummer | Beschreibung | Hersteller |
PESD5V0V2BM | Very low capacitance bidirectional ESD protection diodes | NXP Semiconductors |
PESD5V0V2BMB | Very low capacitance bidirectional ESD protection diodes | NXP Semiconductors |
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