PESD5V0C1USF Datasheet PDF - NXP Semiconductors
| Part Number | PESD5V0C1USF | |
| Description | Ultra low capacitance unidirectional ESD protection diode | |
| Manufacturers | NXP Semiconductors | |
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PESD5V0C1USF
Ultra low capacitance unidirectional ESD protection diode
6 May 2015
Product data sheet
1. General description
Ultra low capacitance unirectional ElectroStatic Discharge (ESD) protection diode, part of
the TrEOS Protection family. This device is housed in a DSN0603-2 (SOD962) leadless
ultra small Surface-Mounted Device (SMD) package. The TrEOS Protection family is
optimized for safeguarding very sensitive high-speed interfaces against ESD pulses with
a high level of robustness.
2. Features and benefits
• Unidirectional ESD protection of one line
• Extremely low diode capacitance Cd = 0.45 pF
• ESD protection up to ±20 kV according to IEC 61000-4-2
• Ultra small SMD package
3. Applications
ESD and surge protection for:
• ultra high-speed datalines
• very sensitive interface lines
• generic interface lines
in portable electronics, communication, consumer and computing devices.
4. Quick reference data
Table 1.
Symbol
Cd
VRWM
Quick reference data
Parameter
diode capacitance
reverse standoff
voltage
Conditions
f = 1 MHz; VR = 0 V; Tamb = 25 °C
Tamb = 25 °C
Min Typ Max Unit
- 0.45 0.5 pF
- - 5V
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NXP Semiconductors
PESD5V0C1USF
Ultra low capacitance unidirectional ESD protection diode
0.5
Cd
(pF)
0.4
aaa-017823
5
S21
(dB)
0
aaa-017824
0.3 -5
0.2 -10
0.1 -15
0.0
02468
f (GHz)
Fig. 5. Diode capacitance as a function of frequency;
typical values
16 aaa-017825
IPP
(A)
12
Rdyn = 0.1 Ω
-20
10-3
10-2
10-1
1
10 102
f (GHz)
Fig. 6. Insertion loss; typical values
0
IPP
(A)
-4
aaa-017826
Rdyn = 0.1 Ω
8 -8
4 -12
0
0 5 10 15 20
VCL (V)
tp = 100 ns; Transmission Line Pulse (TLP)
Fig. 7. Dynamic resistance with positive clamping
voltage
-16
-20 -15 -10
-5 0
VCL (V)
tp = 100 ns; Transmission Line Pulse (TLP)
Fig. 8. Dynamic resistance with negative clamping
voltage
PESD5V0C1USF
Product data sheet
All information provided in this document is subject to legal disclaimers.
6 May 2015
© NXP Semiconductors N.V. 2015. All rights reserved
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