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PDF CHC3014-99F Data sheet ( Hoja de datos )
| Número de pieza | CHC3014-99F | |
| Descripción | GaAs Monolithic Microwave IC | |
| Fabricantes | United Monolithic Semiconductors | |
| Logotipo |  |
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CHC3014-99F
RoHS COMPLIANT
X-band Core Chip
GaAs Monolithic Microwave IC
Description
The CHC3014-99F is a Receive and
Transmit X band Core Chip.
It includes a 6 bit phase shifter, a 6 bit
attenuator, a second 2 bit attenuator for
tuning, self-biased buffers, switch and TTL
compatible parallel interfaces.
This device is manufactured 0.25µm pHEMT
process, including via holes through the
substrate.
It is available in chip form.
Main Features
■ Operating frequency range: 8 -12GHz
■ Receive path linear gain: 13.5dB
■ Transmit path linear gain: 25dB
■ Phase shift range: 0-360°(step 5.625°)
■ Fine attenuator: 34.65dB (step 0.55dB)
■ Tuning attenuator: 6dB (step 2dB)
■ Chip size: 4.47 x 5.07 x 0.1mm
Main Characteristics
Tamb.= +25°C, V+ = 5V / V- = -5V
Symbol
Parameter
Min Typ Max Unit
Freq Frequency range
8 12 GHz
Rms_pe RMS phase error
2°
Rms_att RMS attenuation error
0.3 dB
P-1dB Rx
Psat Tx
NF
Output power at RxOUT @1dB gain comp.
Output power at TxOUT at saturation
Noise figure in Rx mode
16.5
20
5.8
dBm
dBm
dB
ESD Protection: Electrostatic discharge sensitive device. Observe handling precautions!
Ref. : DSCHC3014-0293 - 20 Sep 10
1/20
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - BP46 - 91401 Orsay Cedex France
Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
1 page  
X-band Core Chip
RMS Attenuation Error (Rms_att)
∑Rms_att = 20 log1 +
1
63
.
64 i=0
(1 −
Att _ err(i,
j) _ lin)2
(dB)
RMS Phase variation (Rms_Phivar)
Rms_Phivar =
∑63
(Phi var(i, j))2
j=0
64
(°)
CHC3014-99F
Absolute Maximum Ratings
Tamb.= +25°C (1)
Symbol
Parameter
Values
Unit
V+ Maximum positive bias voltage
6V
V- Negative voltage range
-6 to -4
V
P_RFRX Maximum peak input power overdrive in Rx mode
16 dBm
P_RFTX Maximum peak input power overdrive in Tx mode
16 dBm
Ai CTRL voltage (TI_low, TI_high)
-2, +8
V
Tch Maximum channel temperature (2)
175 °C
Ta Operating temperature range
-40 to +85
°C
Tstg
Storage temperature range
-55 to +125
°C
(1) Operation of this device above anyone of these parameters may cause permanent
damage.
(2) Thermal Resistance channel to ground paddle = 40°C /W for T= +85°C
Ref. : DSCHC3014-0293 - 20 Sep 10
5/20
Route Départementale 128, BP46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
Specifications subject to change without notice
5 Page 
X-band Core Chip
CHC3014-99F
Typical on wafer Measurements
Tamb.= +25°C
Fine Attenuator performances: phase variation
Rx mode
Phase variation vs. freq.
Tuning attenuator state 1
Phase shifter states 0-8-16-32-63
Phase variation vs. atten. state
Tuning attenuator state 1
Phase shifter states 0-8-16-32-63
8GHz < Freq. < 12GHz
RMS phase variation
Tuning attenuator state 1
Phase shifter states 0-8-16-32-63
Ref. : DSCHC3014-0293 - 20 Sep 10
11/20
Route Départementale 128, BP46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
Specifications subject to change without notice
11 Page | ||
| Páginas | Total 20 Páginas | |
| PDF Descargar | [ Datasheet CHC3014-99F.PDF ] | |
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