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CHA6005-99F Schematic ( PDF Datasheet ) - United Monolithic Semiconductors

Teilenummer CHA6005-99F
Beschreibung GaAs Monolithic Microwave IC
Hersteller United Monolithic Semiconductors
Logo United Monolithic Semiconductors Logo 




Gesamt 10 Seiten
CHA6005-99F Datasheet, Funktion
CHA6005-99F
8-12GHz High Power Amplifier
GaAs Monolithic Microwave IC
Description
The CHA6005-99F is a high power amplifier
monolithic circuit, which integrates two
stages and produces 32.5dBm output power
associated to a high power added efficiency
of 38%.
It is designed for a wide range of
applications, from military to commercial
communication systems.
The circuit is manufactured with a pHEMT
process, 0.25µm gate length, via holes
through the substrate, air bridges and
electron beam gate lithography.
It is available in chip form.
Main Features
High power : 32.5dBm
High PAE : 38%
Frequency band : 8-12GHz
Linear gain : 22dB
DC bias: Vd=8Volt@Id=350mA
Chip size 3x1.5x0.1mm
34 600
32 550
30 500
28 450
Linear Gain (dB)
26
Pout @ Pin=14 dBm (3dBcomp)
400
Idrain @ Pin=14 dBm (3dBcomp)
24 350
22 300
20 250
18 200
8 8.5 9 9.5 10 10.5 11 11.5 12
Freq (GHz)
Main Electrical Characteristics
Tamb.= +25°C
Symbol
Parameter
Freq Frequency range
G Linear Gain
P1dB Output Power @ 3dB comp.
PAE Power Added Efficiency @ 3dB comp.
Min Typ Max Unit
8 12 GHz
22 dB
31.5 dBm
38 %
Ref. : DSCHA60052244 - 31 Aug 12
1/10 Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34






CHA6005-99F Datasheet, Funktion
CHA6005-99F
8-12GHz High Power Amplifier
Typical Test Fixture Measurements
Tamb.= +25°C,
Vd = 8V, Id (Quiescent) = 350mA, Drain Pulse width = 25µs, Duty cycle = 10%
Power added efficiency @ 1 & 3dBcomp versus Frequency
44
43
42
41
40
39
38
37
36
35
34 PAE (%) @ Pin=11 dBm (1dBcomp)
33
32 PAE (%) @ Pin=14 dBm (3dBcomp)
31
30
8 8.5 9 9.5 10 10.5 11 11.5 12
Freq (GHz)
Drain current @ 1 & 3dBcomp versus Frequency
800
700
600
500
400
300
Idrain @ Pin=14 dBm (3dBcomp)
200
Idrain @ Pin=11 dBm (1dBcomp)
100
0
8 8.5 9 9.5 10 10.5 11 11.5 12
Freq (GHz)
Ref. : DSCHA60052244 - 31 Aug 12
6/10 Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34

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