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CHA3689-99F Schematic ( PDF Datasheet ) - United Monolithic Semiconductors

Teilenummer CHA3689-99F
Beschreibung GaAs Monolithic Microwave IC
Hersteller United Monolithic Semiconductors
Logo United Monolithic Semiconductors Logo 




Gesamt 16 Seiten
CHA3689-99F Datasheet, Funktion
CHA3689-99F
RoHS COMPLIANT
12.5-30GHz Low Noise Amplifier
GaAs Monolithic Microwave IC
Description
The CHA3689-99F is a three-stage self
biased wide band monolithic low noise
amplifier.
It is designed for a wide range of
applications, from military to commercial
communication systems.
The circuit is manufactured with a pHEMT
process, 0.25µm gate length, via holes
through the substrate, air bridges and
electron beam gate lithography.
It is available in chip form.
Vd1
RFin
Vd2
B
Main Features
Vd3
RFout
D
Broadband performance: 12.5-30GHz
2.0dB noise figure
26dB gain (12.5-26GHz)
26dBm output IP3 (18-30GHz)
Low DC power consumption
DC bias: Vd=4 Volt @ Id= 90 /120mA
Chip size : 2.45 x 1.21 x 0.1mm
Gain
NF
On wafer typical measurements @ 120mA
Main Characteristics
Tamb = +25°C, Vd1=Vd2=Vd3 = +4V Pads B, D = GND (High current configuration)
Symbol
Parameter
Min Typ Max
Freq Frequency range
12.5 30
Gain Linear Gain
26
NF Noise Figure
2 2.6
Pout1dB Output Power @1dB comp.
14 15
Unit
GHz
dB
dB
dBm
Ref. : DSCHA36891035 - 07 Feb 11
1/16 Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - BP46 - 91401 Orsay Cedex France
Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09






CHA3689-99F Datasheet, Funktion
CHA3689-99F
12.5-30GHz Low Noise Amplifier
Typical on wafer Measurements
Tamb = +25°C, Vd1=Vd2=Vd3= +4V Id = 90 mA
Pads B, D = not connected (low current configuration)
Gain and return losses versus frequency
S21
S11
S22
Noise figure versus frequency
Ref. : DSCHA36891035 - 07 Feb 11
6/16
Route Départementale 128, BP46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
Specifications subject to change without notice

6 Page









CHA3689-99F pdf, datenblatt
CHA3689-99F
12.5-30GHz Low Noise Amplifier
Typical Test Fixture Measurements
Tamb = -40°C / +25°C / +85°C, Vd1=Vd2=Vd3= +4V Id = 120 mA
Pads B, D = not connected (low current configuration)
Measurements are given in the connectors’ access plans. Losses are not de-embedded.
Output IP3 versus input power @ 18GHz Output IP3 versus input power @ 22GHz
-40°C
-40°C
+25°C
+25°C
+85°C
+85°C
18GHz
22GHz
Output IP3 versus input power @ 26GHz Output IP3 versus input power @ 30GHz
-40°C
+25°C
-40°C
+25°C
+85°C
26GHz
+85°C
30GHz
Ref. : DSCHA36891035 - 07 Feb 11
12/16
Route Départementale 128, BP46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
Specifications subject to change without notice

12 Page





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