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Número de pieza | RB751V-40 | |
Descripción | SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE | |
Fabricantes | SEMTECH | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de RB751V-40 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
No Preview Available ! RB751V-40
SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE
Features
• Small surface mounting type
• Low reverse current and low forward voltage
• High reliability
Applications
• High speed switching
PINNING
PIN
1
2
DESCRIPTION
Cathode
Anode
12
S8
Top View
Marking Code: "S8"
Simplified outline SOD-323 and symbol
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Peak Reverse Voltage
Reverse Voltage
Mean Rectifying Current
Peak Forward Surge Current (60 Hz for 1 Cyc.)
Junction Temperature
Storage Temperature Range
Symbol
VRM
VR
IO
IFSM
Tj
Ts
Value
40
30
30
200
125
- 40 to + 125
Unit
V
V
mA
mA
OC
OC
Characteristics at Ta = 25 OC
Parameter
Forward Voltage
at IF = 1 mA
Reverse Current
at VR = 30 V
Capacitance Between Terminals
at VR = 1 V, f = 1 MHz
Note: ESD sensitive product handling required.
Symbol
VF
IR
CT
Typ.
-
-
2
Max.
0.37
0.5
-
Unit
V
µA
pF
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 01/09/2006
1 page |
Páginas | Total 2 Páginas | |
PDF Descargar | [ Datasheet RB751V-40.PDF ] |
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