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PDF RB751V-40 Data sheet ( Hoja de datos )
| Número de pieza | RB751V-40 | |
| Descripción | 0.03AMP Surface Mount Schottky Barrier Diode | |
| Fabricantes | Taiwan Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de RB751V-40 (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
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RB751V-40
Taiwan Semiconductor
Small Signal Product
200mW, Low VF SMD Schottky Barrier Diode
FEATURES
- Low power loss, high current capability,low VF
- Surface device type mounting
- Moisture sensitivity level 1
- Matte Tin(Sn) lead finishwith Nickel(Ni) underplate
- Pb free version and ROHS compliant
- Green compound (Halogen free) with suffix "G" on
packing code and prefix "G" on date code
MECHANICAL DATA
Case : SOD-323 small outline plastic package
SOD-323
Terminals : Matte tin plated, lead free, solderable
per MIL-STD-202, method 208 guaranteed
High temperature soldering guaranteed : 260°C/10s
Polarity : Indicated by cathode band
Weight : 0.004grams (approximately)
Marking Code : 5
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted)
PARAMETER
SYMBOL
VALUE
Power dissipation
PD 200
Reverse voltage
VR 30
Repetitive peak reverse voltage
Mean Forward Current @ 25o C ( Lead Temperature )
VRRM
Io
40
30
Non-repetitive peak forward surge current (Note 1)
IFSM
0.2
Thermal resistance (Junction to Ambient) (Note 2)
RθJA
500
Junction and storage temperature range
TJ , TSTG
-45 to + 125
UNITS
mW
V
V
mA
A
oC/W
oC
PARAMETER
SYMBOL
MIN
MAX
Forward voltage
IF=1.0mA
VF
Reverse leakage current
VR=30V
IR
Junction capacitance
VR=1, f=1.0MHz
CJ
Notes : 1.Test Condition: 8.3ms single half sine-wave superimposed on rated load (JEDEC method)
Notes : 2. Valid provided that terminals are kept at ambient temperature
-
-
0.37
0.5
2
UNITS
V
μA
pF
Version : C14
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet RB751V-40.PDF ] | |
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