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PDF ABS20M Data sheet ( Hoja de datos )

Número de pieza ABS20M
Descripción 1000V Glass Passivated Bridge Rectifier
Fabricantes Taiwan Semiconductor 
Logotipo Taiwan Semiconductor Logotipo



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ABS20M
Taiwan Semiconductor
CREAT BY ART
2A, 1000V Glass Passivated Bridge Rectifier
FEATURES
- Glass passivated junction
- Ideal for automated placement
- Reliable low cost construction utilizing molded plastic technique
- High surge current capability
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21
MECHANICAL DATA
Case: Molded plastic body
Molding compound, UL flammability classification rating 94V-0
Moisture sensitivity level: level 1, per J-STD-020
Part no. with suffix "H" means AEC-Q101 qualified
Packing code with suffix "G" means green compound (halogen-free)
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 2 whisker test
Polarity: Polarity as marked on the body
Weight: 0.096 g (approximately)
ABS
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
SYMBOL
VRRM
VRMS
VDC
ABS20M
1000
700
1000
Maximum average forward rectified current
On glass-epoxy
On aluminum substrate
IF(AV)
1.6
2.0
Peak forward surge current, 8.3 ms single half
sine-wave superimposed on rated load
Peak forward surge current, 1 ms single half
sine-wave superimposed on rated load
Rating for fusing (t<8.3ms)
TJ=25°C
TJ=125°C
Maximum instantaneous forward voltage
(Note 1)
Maximum reverse current @ rated VR
IF= 1 A
IF= 2 A
TJ=25°C
TJ=125°C
TJ=25°C
TJ=125°C
TJ=25°C
TJ=125°C
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: Pulse test with PW=300μs, 1% duty cycle
IFSM
IFSM
I2t
VF
IR
RθJL
RθJA
TJ
TSTG
50
TYP
0.92
0.80
-
0.94
110
90
10.375
MAX
1.02
-
1.10
-
5
150
30
85
- 55 to +150
- 55 to +150
UNIT
V
V
V
A
A
A
A2s
V
μA
°C/W
°C
°C
Document Number: DS_D0000106
Version: A15

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