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Número de pieza | CHV2411AQDG | |
Descripción | GaAs Monolithic Microwave IC | |
Fabricantes | United Monolithic Semiconductors | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de CHV2411AQDG (archivo pdf) en la parte inferior de esta página. Total 12 Páginas | ||
No Preview Available ! CHV2411aQDG
Fully Integrated HBT K-band VCO
GaAs Monolithic Microwave IC in QFN package
Description
The CHV2411aQDG is a monolithic
multifunction for frequency generation. It
integrates an X-band “push-push”
oscillator with frequency control (VCO)
thanks to base-collector diodes, used as
varactors, a K-band buffer amplifiers and
a divider by 8. The VCO is fully
integrated on HBT process. All the active
devices are internally self-biased.
The circuit is fully integrated on InGaP
HBT process: 2µm emitter length, via
holes through the substrate and high Q
passive elements.
The chip is delivered in a 24 Leads
RoHS compliant QFN4x4 package.
Main Features
■ K-band VCO+K bufffers+Prescaler/8
■ Fully integrated VCO
(no need for external resonator)
■ Low phase noise
■ High temperature range
■ High frequency stability
■ On chip self-biased devices
■ Standard SMD package: 24L-QFN4x4
Main Characteristics
UUMMSS
VYA2Y34W6168W178AAG
YYWW
Plastic package
+V
V_Tune
x2
2
÷8
IF_out
RF_out
26.0
25.6
25.2
24.8
24.4
24.0
23.6
23.2
22.8
22.4
22.0
1.0
RF Output Frequency vs Vtune
-40°C
+25°C
+105°C
2.0 3.0 4.0 5.0
V_Tune (V)
6.0
Symbol
Parameter
Min Typ Max Unit
F_out Output frequency range on RF_out port
24.0 24.125 24.25 GHz
F_vco VCO frequency
F_out/2
GHz
IF_out Output Intermediate frequency
F_out/16
GHz
P_out Output power on RF_out port
13 16
dBm
PFI Output power at Intermediate freq. (IF)
-3 0
dBm
PN SSB Phase Noise @F_out@100KHz
-90 -80 dBc/Hz
ESD Protections: Electrostatic discharge sensitive device observe handling precautions!
Ref. : DSCHV2411aQDG3232 - 20 Aug 13 1/12 Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
1 page K-band VCO
CHV2411aQDG
Typical QFN Measurements on board 95791 (at QFN accesses)
Note: The temperature mentioned below is taken at the back side of thr QFN package
Sensitivity versus Vtune
800
700
+105°C
600
+25°C
500
-40°C
400
300
200
1.0
2.0 3.0 4.0
V_Tune (V)
RF Output Frequency versus Vtune
5.0
6.0
26.0
25.6
25.2
24.8
-40°C
+25°C
24.4
+105°C
24.0
23.6
23.2
22.8
22.4
22.0
1.0 2.0 3.0 4.0 5.0 6.0
V_Tune (V)
Ref. : DSCHV2411aQDG3232 - 20 Aug 13
5/12 Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
5 Page K-band VCO
CHV2411aQDG
Evaluation mother board:
■ Compatible with the proposed footprint.
■ Based on typically Ro4003 / 8mils or equivalent.
■ Using a micro-strip to coplanar transition to access the package.
■ Recommended for the implementation of this product on a module board.
■ Decoupling capacitors of 10nF ±10% are recommended for all DC accesses.
■ See application note AN0017 for details.
Recommended Test Fixture (Ref. 500242) for measurements over Temperature Range
IF_out
RF_out
7 capacitors 0603 (1µF)
Ref. : DSCHV2411aQDG3232 - 20 Aug 13
11/12
Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
11 Page |
Páginas | Total 12 Páginas | |
PDF Descargar | [ Datasheet CHV2411AQDG.PDF ] |
Número de pieza | Descripción | Fabricantes |
CHV2411AQDG | GaAs Monolithic Microwave IC | United Monolithic Semiconductors |
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