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PDF CHV2270 Data sheet ( Hoja de datos )
| Número de pieza | CHV2270 | |
| Descripción | GaAs Monolithic Microwave IC | |
| Fabricantes | United Monolithic Semiconductors | |
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Hay una vista previa y un enlace de descarga de CHV2270 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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CHV2270
RoHS Compliant
Fully Integrated Ku-band HBT VCO
Low cost / High linearity
GaAs Monolithic Microwave IC
Description
The CHV2270 is a multifunction for frequency
generation. It integrates a C-band balanced
voltage controlled oscillator providing a Ku-band
output (2nd harmonic), with different modulation
slopes control and other functions like linearity
improvement device making it suitable for radar
modulations. It also includes a dual rank
prescaler, an adjustable medium power
amplifier and a temperature sensor.
The VCO is fully integrated on HBT process. On
chip base-collector diodes are used as
varactors. All the active devices are internally
self biased to ease bias configuration. This chip
is compatible with automatic equipment for
assembly.
The circuit is manufactured on HBT process
2µm emitter length, via holes through the
substrate and high Q passive elements.
It is available in chip form.
G L IN
+V SET HP
Vmt
Vft
Vct
SET N
6.375GHz
x2
RF_OUT
12.75GHz
÷N
VCO HBT
P res N_ O UT
Vtemp
VCO multifunction block diagram
Main Features
-40°C to +125°C temperature range
Low temperature dependence
Fully integrated VCO architecture
Prescaler by up to F_out/128
Low phase noise
Low cost / high linearity oriented
Adjustable output power
Temperature sensor
Very simple bias configuration
Low DC power consumption
Automatic assembly oriented
SiNx layer protection
Chip size: 1.38 x 2.05 x 0.1mm
Main Characteristics
Tamb = +25°C
Symbol
Parameter
Typical VCO F_out(Vct) tuning (GHz)
12,8
12,75
12,7
12,65
12,6
0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5
Typical free running VCO F_out(Vmt) tuning
Min Typ Max Unit
F_out Specified output frequency range
12.65
12.75 12.85 GHz
PN Phase noise @ F_out and 100kHz offset
-100
-90 dBc/Hz
Pout
Output power (SETHP=open)
1
5 or 14
8
dBm
Pout
Output power (SETHP=+V)
14 dBm
Ref.: DSCHV22709030 -30 Jan 09
1/8 Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
1 page  
Ku-band HBT VCO
Chip Mechanical Data and Pin References
5 6 789
82 355 655
1105
4
CHV2270
10
11
12
13
3 14
2 15
655 1228
Origin 0,0
Layout 1310x1980
1
Unit = µm
External chip size (layout size + dicing streets) = 1380 x 2050 ± 35
Chip thickness = 100 +/- 10
RF Pads (1, 5) = 75 x 100 (SiNx opening larger in the bonding axis)
DC/IF Pads = 75 x 100 (SiNx opening larger in the bonding axis)
SiNx layer protection thickness = 0.2
Pin number
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
Pin name
RF
SETHP
VA1
VD1
VD2
PRES4
SET4
SET64
PRES64
GLIN
VTF
VTM
VTC
VA2
VTEMP
Description
RF output port
RF power option setting port
Positive supply voltage port (intra-connected to VA2)
Positive supply voltage port (intra-connected to VD2)
Positive supply voltage port (intra-connected to VD1)
Prescaler rank 4 output port
Prescaler rank 4 option setting port
Prescaler rank 64 option setting port
Prescaler rank 64 output port
VTM linearity option setting port
RF Frequency fine tuning port
RF Frequency medium tuning port
RF Frequency coarse tuning port
Positive supply voltage port (intra-connected to VA1)
Temperature sensor output port
Ref. : DSCHV22709030 -30 Jan 09
5/8 Specifications subject to change without notice
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet CHV2270.PDF ] | |
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