|
|
PDF CHU3277 Data sheet ( Hoja de datos )
| Número de pieza | CHU3277 | |
| Descripción | GaAs Monolithic Microwave IC | |
| Fabricantes | United Monolithic Semiconductors | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de CHU3277 (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
|
No Preview Available !
CHU3277
RoHS COMPLIANT
W-band Multi-function: Multiplier / MPA
GaAs Monolithic Microwave IC
Description
The CHU3277 is a W-band monolithic
multifunction, which integrates an input
buffer/power divider and two W-band chains in
parallel combined at the output. Each one
includes a frequency multiplier and a four-stages
medium power amplifier. The frequency
multipliers are based on active transistors and
allow operation at low input level with reduced
power consumption.
All the active devices are internally self-biased to
ease bias configuration. This chip is compatible
with automatic equipment for assembly.
The circuit is manufactured with the P-HEMT
process: 0.15µm gate length, via holes through
the substrate, air bridges and electron beam gate
lithography.
It is available in chip form.
W-band multifunction block-diagram
Main Features
n Wide operating frequency range
n Low input power: 5dBm typical
n High output power
n Low AM noise
n Wide temperature range
n On-chip self biasing
n Very simple bias configuration
n Low DC power consumption
n Automatic assembly oriented
n BCB layer protection
n Chip size: 3.9 x 1.66 x 0.1mm
Main Typical Characteristics
Tamb = +25°C
Symbol
F_in
P_in
F_out
Pout
Parameter
Input frequency
Input power
Output frequency
Output power
Min Typ Max
38 38.5
5
76 77
18
ESD Protections: Electrostatic discharge sensitive device observe handling precautions!
Unit
GHz
dBm
GHz
dBm
Ref. DSCHU3277391 - 01 Apr 03
1/7 Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
1 page  
CHU3277
W-band Multiplier/MPA
Typical Assembly and Bias Configuration
This drawing shows an example of assembly and bias configuration. All the transistors are
internally self-biased. An external capacitor is recommended for the positive and negative
supply voltages.
For the RF pads the equivalent wire bonding inductance (diameter=25µm) has to be according
to the following recommendation.
Port
IN (2)
OUT (8)
Equivalent inductance
(nH)
L_in = 0.27
L_out = 0.27
Wire length (mm)
(1)
0.34
0.34
(1) This value is the total length including the necessary loop from pad to pad.
For a microstrip configuration a hole in the substrate is necessary for chip assembly.
Ref. DSCHU3277391 - 01 Apr 03
5/7 Specifications subject to change without notice
Route Départementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: 33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet CHU3277.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| CHU3277 | GaAs Monolithic Microwave IC | United Monolithic Semiconductors |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |