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Teilenummer | PESD5V0F1BLD |
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Beschreibung | Femtofarad bidirectional ESD protection diode | |
Hersteller | NXP Semiconductors | |
Logo | ||
Gesamt 11 Seiten PESD5V0F1BLD
Femtofarad bidirectional ESD protection diode
Rev. 1 — 23 July 2012
Product data sheet
1. Product profile
1.1 General description
Femtofarad bidirectional ElectroStatic Discharge (ESD) protection diode designed to
protect one signal line from the damage caused by ESD and other transients. The device
is encapsulated in a leadless ultra small DFN1006D-2 (SOD882D) Surface-Mounted
Device (SMD) plastic package with visible and solderable side pads.
The combination of extremely low capacitance, high ESD maximum rating and ultra small
package makes the device ideal for high-speed data line protection and antenna
protection applications.
1.2 Features and benefits
Bidirectional ESD protection of one line ESD protection up to 10 kV
Femtofarad capacitance: Cd = 400 fF
Low ESD clamping voltage: 30 V
IEC 61000-4-2; level 4 (ESD)
Package height typ. 0.37 mm
at 30 ns and 8 kV
Very low leakage current: IRM < 1 nA AEC-Q101 qualified
1.3 Applications
10/100/1000 Mbit/s Ethernet
FireWire
High-speed data lines
SIM card protection
Cellular handsets and accessories
Portable electronics
Communication systems
Computers and peripherals
Audio and video equipment
Antenna protection
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Per device
VRWM
Cd
reverse standoff voltage
diode capacitance
Conditions
f = 1 MHz; VR = 0 V
Min Typ
--
- 0.4
Max Unit
5.5 V
0.55 pF
NXP Semiconductors
PESD5V0F1BLD
Femtofarad bidirectional ESD protection diode
7. Application information
The device is designed for the protection of one bidirectional data or signal line from surge
pulses and ESD damage. The device is suitable on lines where the signal polarities are
both, positive and negative with respect to ground.
line to be protected
ESD protection diode
GND
aaa-002737
Fig 6. Application diagram
Circuit board layout and protection device placement
Circuit board layout is critical for the suppression of ESD, Electrical Fast Transient (EFT)
and surge transients. The following guidelines are recommended:
1. Place the device as close to the input terminal or connector as possible.
2. Minimize the path length between the device and the protected line.
3. Keep parallel signal paths to a minimum.
4. Avoid running protected conductors in parallel with unprotected conductors.
5. Minimize all Printed-Circuit Board (PCB) conductive loops including power and
ground loops.
6. Minimize the length of the transient return path to ground.
7. Avoid using shared transient return paths to a common ground point.
8. Use ground planes whenever possible. For multilayer PCBs, use ground vias.
8. Test information
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
PESD5V0F1BLD
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 23 July 2012
© NXP B.V. 2012. All rights reserved.
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Seiten | Gesamt 11 Seiten | |
PDF Download | [ PESD5V0F1BLD Schematic.PDF ] |
Teilenummer | Beschreibung | Hersteller |
PESD5V0F1BL | Femtofarad bidirectional ESD protection diode | NXP Semiconductors |
PESD5V0F1BLD | Femtofarad bidirectional ESD protection diode | NXP Semiconductors |
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