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8N60 Schematic ( Datenblatt PDF ) - Unisonic Technologies

Teilenummer 8N60
Beschreibung N-CHANNEL POWER MOSFET
Hersteller Unisonic Technologies
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8N60 Datasheet, Funktion
UNISONIC TECHNOLOGIES CO., LTD
8N60
8A, 600V N-CHANNEL
POWER MOSFET
„ DESCRIPTION
The UTC 8N60 is a high voltage and high current power
MOSFET, designed to have better characteristics, such as fast
switching time, low gate charge, low on-state resistance and have
a high rugged avalanche characteristics. This power MOSFET is
usually used at high speed switching applications in power
supplies, PWM motor controls, high efficient DC to DC converters
and bridge circuits.
„ FEATURES
* RDS(ON) < 1.2@VGS = 10 V
* Ultra low gate charge ( typical 28 nC )
* Low reverse transfer capacitance ( CRSS = typical 12.0 pF )
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
„ SYMBOL
Power MOSFET
„ ORDERING INFORMATION
Note:
Ordering Number
Lead Free
Halogen Free
8N60L-TA3-T
8N60G-TA3-T
8N60L-TF1-T
8N60G-TF1-T
8N60L-TF2-T
8N60G-TF2-T
8N60L-TF3-T
8N60G-TF3-T
8N60L-T2Q-T
8N60G-T2Q-T
Pin Assignment: G: Gate D: Drain S: Source
Package
TO-220
TO-220F1
TO-220F2
TO-220F
TO-262
Pin Assignment
123
GDS
GDS
GDS
GDS
GDS
Packing
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Copyright © 2014 Unisonic Technologies Co., Ltd
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QW-R502-115.G






8N60 Datasheet, Funktion
8N60
„ TEST CIRCUITS AND WAVEFORMS (Cont.)
VDS
VGS
RG
10V
RL VDS 90%
VDD
D.U.T.
10%
VGS
tD(ON)
tR
Power MOSFET
tD(OFF)
tF
Switching Test Circuit
Switching Waveforms
VGS
10V
QGS
QG
QGD
Gate Charge Test Circuit
Charge
Gate Charge Waveform
Unclamped Inductive Switching Test Circuit
BVDSS
IAS
VDD
ID(t)
tp
VDS(t)
Time
Unclamped Inductive Switching Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-115.G

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