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PDF DB4 Data sheet ( Hoja de datos )
| Número de pieza | DB4 | |
| Descripción | Silicon Bidirectional Diacs | |
| Fabricantes | TGS | |
| Logotipo |  |
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TIGER ELECTRONIC CO.,LTD
DB3/DB4
Silicon Bidirectional Diacs
VOLTAGE RANGE: 28-45 V
DO-35
Features
The three layer,two termnal,axial lead,hermetically
1111sealed diacs are designed specifically for triggering
1111thyristors.They demonstrate low breakover current at
1111breakover voltage as they withstand peak pulse
1111current,The breakover symmetry is within three
1111volts(DB3,DB4). These diacs are intended for use in
CCCthyrisitors phase control,circuits for lamp dimming,
FFFI universal motor speed control,and heat control.
ABSOLUTE RATINGS
Parameters
Symbols
Dimensions in inches and (millimeters)
DB3,DB4
UNITS
Power dissipation on printed
TA=50oC circuit (L=10mm)
Pc
Repetitive peak on-state
current
tp=20 S
f=120Hz
ITRM
Operating junction temperature
TJ
Storage temperature
TSTG
ELECTRICAL CHARACTERISTICS
150.0
2.0
-40--- +125
-40--- +125
Parameters
Test Conditions
Breakover voltage (NOTE 1)
C=22nf(NOTE 2)
VBO See FIG.1
Breakover voltage symmetry
Dynamic breakover voltage (NOTE 1)
I+VBO I-
I-VBOI
I± VI
C=22nf(NOTE 2)
See FIG.1
I=(IBO to IF=10mA)
See FIG.1
Output voltage (NOTE 1)
Vo See FIG.2
Breakover current (NOTE 1)
Rise time (NOTE 1)
Leakage current (NOTE 1)
IBO C=22nf(NOTE 2)
tr See FIG.3
IR
VR=0.5 VBO
See FIG.1
NOTE: 1.Electrical characteristics applicable in both forw ard and reverse dirctions.
2.Connected in parallel w ith the devices
Min
Typ
Max
Max
Min
Min
Max
Typ
Max
DB3 DB4
28 35
32 40
36 45
±3.0
5.0
5.0
100.0
1.5
10.0
mW
A
oC
oC
UNITS
V
V
V
V
A
S
A
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