PESD5V0U4BW Datasheet PDF - NXP Semiconductors
| Part Number | PESD5V0U4BW | |
| Description | Ultra low capacitance bidirectional quadruple ESD protection arrays | |
| Manufacturers | NXP Semiconductors | |
| Logo |  |
|
|
There is a preview and PESD5V0U4BW download ( pdf file ) link at the bottom of this page. Total 12 Pages | ||
Preview 1 page No Preview Available !
PESD5V0U4BF; PESD5V0U4BW
Ultra low capacitance bidirectional quadruple ESD
protection arrays
Rev. 01 — 15 August 2008
Product data sheet
1. Product profile
1.1 General description
Ultra low capacitance bidirectional quadruple ElectroStatic Discharge (ESD) protection
arrays in ultra small Surface-Mounted Device (SMD) plastic packages designed to protect
up to four signal lines from the damage caused by ESD and other transients.
Table 1. Product overview
Type number
Package
NXP
PESD5V0U4BF
SOT886
PESD5V0U4BW
SOT665
JEDEC
MO-252
-
Package configuration
leadless ultra small
ultra small and flat lead
1.2 Features
I Bidirectional ESD protection of up to I ESD protection up to 10 kV
four lines
I Ultra low diode capacitance: Cd = 2.9 pF I IEC 61000-4-2; level 4 (ESD)
I Ultra low leakage current: IRM = 5 nA I AEC-Q101 qualified
1.3 Applications
I Computers and peripherals
I Audio and video equipment
I Cellular handsets and accessories
I 10/100/1000 Mbit/s Ethernet
I Communication systems
I Portable electronics
I Subscriber Identity Module (SIM) card
protection
I FireWire
I High-speed data lines
|
| |
 
NXP Semiconductors
PESD5V0U4BF; PESD5V0U4BW
Ultra low capacitance bidirectional quadruple ESD protection arrays
6. Characteristics
Table 9. Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Per diode
VRWM
reverse standoff
voltage
IRM reverse leakage current VRWM = 5 V
VBR breakdown voltage IR = 5 mA
Cd
diode capacitance
f = 1 MHz
VR = 0 V
VR = 5 V
rdif differential resistance IR = 1 mA
Min Typ Max Unit
- - 5V
- 5 100 nA
5.5 6.5 9.5 V
- 2.9 3.5 pF
- 1.9 - pF
- - 100 Ω
3.0
Cd
(pF)
2.6
006aab036
2.2
1.8
012345
VR (V)
Fig 2.
f = 1 MHz; Tamb = 25 °C
Diode capacitance as a function of reverse
voltage; typical values
IPP
−VCL −VBR −VRWM
IR
IRM
−IRM
−IR
VRWM VBR VCL
−
−IPP
+
006aaa676
Fig 3. V-I characteristics for a bidirectional
ESD protection diode
PESD5V0U4BF_PESD5V0U4BW_1
Product data sheet
Rev. 01 — 15 August 2008
© NXP B.V. 2008. All rights reserved.
5 of 12
Preview 5 Page |
Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for PESD5V0U4BW electronic component. |
| Information | Total 12 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ PESD5V0U4BW.PDF Datasheet ] | |
Share Link :
Electronic Components Distributor
|
An electronic components distributor is a company that sources, stocks, and sells electronic components to manufacturers, engineers, and hobbyists. |
| SparkFun Electronics | Allied Electronics | DigiKey Electronics | Arrow Electronics |
| Mouser Electronics | Adafruit | Newark | Chip One Stop |
Featured Datasheets
| Part Number | Description | MFRS |
| PESD5V0U4BF | The function is Ultra low capacitance bidirectional quadruple ESD protection arrays. NXP Semiconductors | |
| PESD5V0U4BW | The function is Ultra low capacitance bidirectional quadruple ESD protection arrays. NXP Semiconductors | |
Semiconductors commonly used in industry:
1N4148 |
BAW56 |
1N5400 |
NE555 | | ||
Quick jump to:
PESD
1N4
2N2
2SA
2SC
74H
BC
HCF
IRF
KA | ||