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Número de pieza | IKP08N65F5 | |
Descripción | IGBT | |
Fabricantes | Infineon | |
Logotipo | ||
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No Preview Available ! IGBT
Highspeed5FASTIGBTinTRENCHSTOPTM5technologycopackedwithRAPID1
fastandsoftantiparalleldiode
IKP08N65F5
650VDuoPackIGBTandDiode
Highspeedswitchingseriesfifthgeneration
Datasheet
IndustrialPowerControl
1 page IKP08N65F5
Highspeedswitchingseriesfifthgeneration
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Parameter
Symbol Conditions
StaticCharacteristic
Collector-emitter breakdown voltage V(BR)CES
Collector-emitter saturation voltage VCEsat
Diode forward voltage
VF
Gate-emitter threshold voltage
VGE(th)
Zero gate voltage collector current ICES
Gate-emitter leakage current
Transconductance
IGES
gfs
VGE=0V,IC=0.20mA
VGE=15.0V,IC=8.0A
Tvj=25°C
Tvj=125°C
Tvj=175°C
VGE=0V,IF=9.0A
Tvj=25°C
Tvj=125°C
Tvj=175°C
IC=0.08mA,VCE=VGE
VCE=650V,VGE=0V
Tvj=25°C
Tvj=175°C
VCE=0V,VGE=20V
VCE=20V,IC=8.0A
min.
Value
typ.
max. Unit
650 -
-V
-
-
1.60 2.10
1.80 -
V
- 1.90 -
-
-
1.45 1.80
1.40 -
V
- 1.40 -
3.2 4.0 4.8 V
- - 40.0 µA
- - 4000.0
- - 100 nA
- 17.0 - S
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Parameter
DynamicCharacteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Internal emitter inductance
measured 5mm (0.197 in.) from
case
Symbol Conditions
Cies
Coes VCE=25V,VGE=0V,f=1MHz
Cres
QG
VCC=520V,IC=8.0A,
VGE=15V
LE
min.
Value
typ.
max. Unit
- 500 -
- 16 - pF
-3-
- 22.0 - nC
- 7.0 - nH
SwitchingCharacteristic,InductiveLoad
Parameter
Symbol Conditions
IGBTCharacteristic,atTvj=25°C
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Tvj=25°C,
VCC=400V,IC=4.0A,
VGE=0.0/15.0V,
RG(on)=48.0Ω,RG(off)=48.0Ω,
Lσ=30nH,Cσ=30pF
Lσ,CσfromFig.E
Energy losses include “tail” and
diode reverse recovery.
Value
Unit
min. typ. max.
- 10 - ns
- 5 - ns
- 116 - ns
- 20 - ns
- 0.07 - mJ
- 0.02 - mJ
- 0.09 - mJ
5 Rev.2.1,2015-05-05
5 Page IKP08N65F5
Highspeedswitchingseriesfifthgeneration
0.200
0.175
Eoff
Eon
Ets
0.200
0.175
Eoff
Eon
Ets
0.150
0.150
0.125
0.125
0.100
0.100
0.075
0.075
0.050
0.050
0.025
0.025
0.000
5
15 25 35 45 55 65 75 85
rG,GATERESISTOR[Ω]
Figure 13. Typicalswitchingenergylossesasa
functionofgateresistor
(inductiveload,Tvj=150°C,VCE=400V,
VGE=15/0V,IC=4A,Dynamictestcircuitin
Figure E)
0.200
0.175
0.000
25
50 75 100 125 150
Tvj,JUNCTIONTEMPERATURE[°C]
175
Figure 14. Typicalswitchingenergylossesasa
functionofjunctiontemperature
(inductiveload,VCE=400V,VGE=15/0V,
IC=4A,rG=48Ω,DynamictestcircuitinFigure
E)
16
130V
520V
14
0.150
0.125
Eoff
Eon
Ets
12
10
0.100
8
0.075
6
0.050
4
0.025
2
0.000
200 250 300 350 400 450 500
VCE,COLLECTOR-EMITTERVOLTAGE[V]
0
0.0 5.0 10.0 15.0 20.0 25.0
QGE,GATECHARGE[nC]
Figure 15. Typicalswitchingenergylossesasa
Figure 16. Typicalgatecharge
functionofcollectoremittervoltage
(IC=8A)
(inductiveload,Tvj=150°C,VGE=15/0V,
IC=4A,rG=48Ω,DynamictestcircuitinFigure
E) 11
Rev.2.1,2015-05-05
11 Page |
Páginas | Total 17 Páginas | |
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