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Número de pieza | IPL65R1K0C6S | |
Descripción | MOSFET ( Transistor ) | |
Fabricantes | Infineon | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de IPL65R1K0C6S (archivo pdf) en la parte inferior de esta página. Total 14 Páginas | ||
No Preview Available ! MOSFET
MetalOxideSemiconductorFieldEffectTransistor
CoolMOS™C6
650VCoolMOS™C6PowerTransistor
IPL65R1K0C6S
DataSheet
Rev.2.0
Final
PowerManagement&Multimarket
1 page 650VCoolMOS™C6PowerTransistor
IPL65R1K0C6S
4Electricalcharacteristics
Table4Staticcharacteristics
Parameter
Symbol
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage curent
Drain-source on-state resistance
Gate resistance
V(BR)DSS
V(GS)th
IDSS
IGSS
RDS(on)
RG
Table5Dynamiccharacteristics
Parameter
Symbol
Input capacitance
Output capacitance
Effective output capacitance, energy
related1)
Effective output capacitance, time
related2)
Turn-on delay time
Ciss
Coss
Co(er)
Co(tr)
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Table6Gatechargecharacteristics
Parameter
Symbol
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Qgs
Qgd
Qg
Vplateau
Min.
650
2.50
-
-
-
-
-
-
Values
Typ. Max.
--
3 3.50
-1
10 -
- 100
0.90 1.00
2.34 -
5.5 -
Unit Note/TestCondition
V VGS=0V,ID=1mA
V VDS=VGS,ID=0.15mA
µA
VDS=650V,VGS=0V,Tj=25°C
VDS=650V,VGS=0V,Tj=150°C
nA VGS=20V,VDS=0V
Ω
VGS=10V,ID=1.5A,Tj=25°C
VGS=10V,ID=1.5A,Tj=150°C
Ω f=1MHz,opendrain
Min.
-
-
-
Values
Typ. Max.
328 -
23 -
14 -
Unit Note/TestCondition
pF VGS=0V,VDS=100V,f=1MHz
pF VGS=0V,VDS=100V,f=1MHz
pF VGS=0V,VDS=0...520V
- 58.5 - pF ID=constant,VGS=0V,VDS=0...520V
-
6.6 -
ns
VDD=400V,VGS=10V,ID=2.2A,
RG=10.2Ω
-
5.2 -
ns
VDD=400V,VGS=10V,ID=2.2A,
RG=10.2Ω
-
41 -
ns
VDD=400V,VGS=10V,ID=2.2A,
RG=10.2Ω
-
13.6 -
ns
VDD=400V,VGS=10V,ID=2.2A,
RG=10.2Ω
Min.
-
-
-
-
Values
Typ. Max.
1.8 -
8-
15 -
5.3 -
Unit Note/TestCondition
nC VDD=520V,ID=2.2A,VGS=0to10V
nC VDD=520V,ID=2.2A,VGS=0to10V
nC VDD=520V,ID=2.2A,VGS=0to10V
V VDD=520V,ID=2.2A,VGS=0to10V
1)Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to80%V(BR)DSS
2)Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to80%V(BR)DSS
Final Data Sheet
5 Rev.2.0,2014-07-08
5 Page 6TestCircuits
Table8Diodecharacteristics
Test circuit for diode characteristics
Rg1
VDS
Rg 2
IF
Rg1 = Rg 2
650VCoolMOS™C6PowerTransistor
IPL65R1K0C6S
Diode recovery waveform
V,I
VDS( peak)
VDS
IF
dIF / dt
Irrm
VDS
trr
tF tS
IF t
QF QS
10 %Irrm
dIrr / dt Qtrrrr ==tFQ+F t+S QS
Table9Switchingtimes
Switching times test circuit for inductive load
VGS
VDS
VDS
VGS
Switching times waveform
90%
10%
td(on) tr
ton
td(off) tf
toff
Table10Unclampedinductiveload
Unclamped inductive load test circuit
ID VDS
Unclamped inductive waveform
V(BR)DS
VDS
ID
VDS
Final Data Sheet
11 Rev.2.0,2014-07-08
11 Page |
Páginas | Total 14 Páginas | |
PDF Descargar | [ Datasheet IPL65R1K0C6S.PDF ] |
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IPL65R1K0C6S | MOSFET ( Transistor ) | Infineon |
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