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Número de pieza | EFC6605R | |
Descripción | N-Channel Power MOSFET / Transistor | |
Fabricantes | ON Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de EFC6605R (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! Ordering number : ENA2302
EFC6605R
N-Channel Power MOSFET
20V, 10A, 13.3mΩ, Dual EFCP
http://onsemi.com
Features
• 2.5V drive
• Protection diode in
• Halogen free compliance
• Common-drain type
• 2KV ESD HBM
Applications
• Lithium-ion battery charging and discharging switch
Specifications
Absolute Maximum Ratings at Ta = 25°C
Parameter
Symbol
Conditions
Source to Source Voltage
Gate to Source Voltage
Source Current (DC)
Source Current (Pulse)
Total Dissipation
Junction Temperature
Storage Temperature
VSSS
VGSS
IS
ISP
PT
Tj
Tstg
PW≤10μs, duty cycle≤1%
When mounted on ceramic substrate (5000mm2×0.8mm)
Value
20
±10
10
60
1.6
150
- 55 to +150
Unit
V
V
A
A
W
°C
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,
damage may occur and reliability may be affected.
Thermal Resistance Ratings
Parameter
Junction to Ambient
When mounted on ceramic substrate (5000mm2×0.8mm)
Symbol
RθJA
Value
78.1
Unit
°C /W
Electrical Characteristics at Ta = 25°C
Parameter
Source to Source Breakdown Voltage
Zero-Gate Voltage Source Current
Gate to Source Leakage Current
Gate Threshold Voltage
Forward Transconductance
Static Source to Source On-State
Resistance
Symbol
V(BR)SSS
ISSS
IGSS
VGS(th)
gFS
RSS(on)1
RSS(on)2
RSS(on)3
RSS(on)4
RSS(on)5
Conditions
IS=1mA, VGS=0V
VSS=20V, VGS=0V
VGS=±8V, VSS=0V
VSS10V, IS=1mA
VSS=10V, IS=3A
IS=3A, VGS=4.5V
IS=3A, VGS=4.0V
IS=3A, VGS=3.8V
IS=3A, VGS=3.1V
IS=3A, VGS=2.5V
Test Circuit 1
Test Circuit 1
Test Circuit 2
Test Circuit 3
Test Circuit 4
Test Circuit 5
Test Circuit 5
Test Circuit 5
Test Circuit 5
Test Circuit 5
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of this data sheet.
min
20
0.5
8.8
9.1
9.3
10.0
11.1
Value
Unit
typ max
V
1 μA
±1.0 μA
1.3 V
11.4
S
11.1
13.3 mΩ
11.4
13.7 mΩ
11.6
13.9 mΩ
12.5
15.6 mΩ
13.9
17.4 mΩ
Continued on next page.
Semiconductor Components Industries, LLC, 2014
March, 2014
32714 TKIM TC-00003101 No.A2302-1/6
1 page EFC6605R
No.A2302-5/6
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet EFC6605R.PDF ] |
Número de pieza | Descripción | Fabricantes |
EFC6605R | N-Channel Power MOSFET / Transistor | ON Semiconductor |
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