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Teilenummer | CED30N08 |
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Beschreibung | N-Channel Enhancement Mode Field Effect Transistor | |
Hersteller | CET | |
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Gesamt 4 Seiten CED30N08/CEU30N08
N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
80V, 30A, RDS(ON) = 30mΩ @VGS = 10V.
RDS(ON) = 38mΩ @VGS = 4.5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead-free plating ; RoHS compliant.
TO-251 & TO-252 package.
D
G
S
CEU SERIES
TO-252(D-PAK)
G
DS
CED SERIES
TO-251(I-PAK)
G
D
S
ABSOLUTE MAXIMUM RATINGS
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous @ TC = 25 C
@ TC = 100 C
Drain Current-Pulsed a
Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
Single Pulsed Avalanche Energy e
Single Pulsed Avalanche Current e
Operating and Store Temperature Range
Tc = 25 C unless otherwise noted
Symbol
Limit
VDS 80
VGS ±20
ID 30
19.5
IDM 120
57.7
PD 0.38
EAS 100
IAS 20
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
RθJC
RθJA
Limit
2.2
50
Units
V
V
A
A
A
W
W/ C
mJ
A
C
Units
C/W
C/W
This is preliminary information on a new product in development now
Details are subject to change without notice .
1
Rev 1. 2014.Nov
http://www.cetsemi.com
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Seiten | Gesamt 4 Seiten | |
PDF Download | [ CED30N08 Schematic.PDF ] |
Teilenummer | Beschreibung | Hersteller |
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