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Teilenummer | CED08N6A |
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Beschreibung | N-Channel Enhancement Mode Field Effect Transistor | |
Hersteller | CET | |
Logo | ||
Gesamt 4 Seiten CED08N6A/CEU08N6A
N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
600V, 6.2A, RDS(ON) = 1.25Ω @VGS = 10V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead-free plating ; RoHS compliant.
TO-251 & TO-252 package.
D
D
G
S
CEU SERIES
TO-252(D-PAK)
G
DS
CED SERIES
TO-251(I-PAK)
G
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
VDS 600
VGS ±30
Drain Current-Continuous @ TC = 25 C
@ TC = 100 C
ID
6.2
4.4
Drain Current-Pulsed a
IDM 24.8
Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
PD
107
0.7
Single Pulsed Avalanche Energy e
EAS 192
Single Pulsed Avalanche Current e
IAS 6.2
Operating and Store Temperature Range
TJ,Tstg
-55 to 175
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
RθJC
RθJA
Limit
1.4
50
Units
V
V
A
A
A
W
W/ C
mJ
A
C
Units
C/W
C/W
This is preliminary information on a new product in development now .
Details are subject to change without notice .
1
Rev 1. 2012.Feb
http://www.cetsemi.com
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Seiten | Gesamt 4 Seiten | |
PDF Download | [ CED08N6A Schematic.PDF ] |
Teilenummer | Beschreibung | Hersteller |
CED08N6A | N-Channel Enhancement Mode Field Effect Transistor | CET |
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