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Teilenummer | CEF840A |
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Beschreibung | N-Channel Enhancement Mode Field Effect Transistor | |
Hersteller | CET | |
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Gesamt 4 Seiten CEP840A/CEB840A
CEF840A
N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
Type
CEP840A
CEB840A
CEF840A
VDSS
500V
500V
500V
RDS(ON)
0.85Ω
0.85Ω
0.85Ω
ID
8.5A
8.5A
8.5A d
@VGS
10V
10V
10V
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead-free plating ; RoHS compliant.
D
DG
G
S
CEB SERIES
TO-263(DD-PAK)
G
D
S
CEP SERIES
TO-220
G
D
S
CEF SERIES
TO-220F
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
TO-220/263 TO-220F
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous @ TC = 25 C
@ TC = 100 C
Drain Current-Pulsed a
VDS
VGS
ID
IDM e
500
±30
8.5
6
34
8.5 d
6d
34 d
Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
150 48
PD 1 0.3
Single Pulsed Avalanche Energy h
EAS 196
Single Pulsed Avalanche Current h
IAS 7.5
Operating and Store Temperature Range
TJ,Tstg
-55 to 175
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
RθJC
RθJA
Limit
1
62.5
3.1
65
Units
V
V
A
A
A
W
W/ C
mJ
A
C
Units
C/W
C/W
This is preliminary information on a new product in development now .
Details are subject to change without notice .
1
Rev 1. 2011.Nov
http://www.cetsemi.com
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Seiten | Gesamt 4 Seiten | |
PDF Download | [ CEF840A Schematic.PDF ] |
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