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Teilenummer | CEB5175 |
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Beschreibung | P-Channel Enhancement Mode Field Effect Transistor | |
Hersteller | CET | |
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Gesamt 4 Seiten CEP5175/CEB5175
P-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
-55V, -50A, RDS(ON) = 23mΩ @VGS = 10V.
RDS(ON) = 28mΩ @VGS = 4.5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead-free plating ; RoHS compliant.
TO-220 & TO-263 package.
D
G
S
CEB SERIES
TO-263(DD-PAK)
G
D
S
CEP SERIES
TO-220
G
D
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
VDS -55
VGS ±20
Drain Current-Continuous @ TC = 25 C
@ TC = 100 C
ID
-50
-32
Drain Current-Pulsed a
IDM -200
Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
PD
96
0.77
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Units
V
V
A
A
A
W
W/ C
C
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
RθJC
RθJA
This is preliminary information on a new product in development now .
Details are subject to change without notice .
1
Limit
1.3
62.5
Units
C/W
C/W
Rev 1. 2014.Apr
http://www.cetsemi.com
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Seiten | Gesamt 4 Seiten | |
PDF Download | [ CEB5175 Schematic.PDF ] |
Teilenummer | Beschreibung | Hersteller |
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